Nature of the metal-insulator transition in few-unit-cell-thick LaNiO3 films

The electronic behaviour of complex oxides such as LaNiO3 depends on many intrinsic and extrinsic factors, making it challenging to identify microscopic mechanisms. Here the authors demonstrate the influence of oxygen vacancies on the thickness-dependent metal-insulator transition of LaNiO3 films.

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Autores principales:	M. Golalikhani, Q. Lei, R. U. Chandrasena, L. Kasaei, H. Park, J. Bai, P. Orgiani, J. Ciston, G. E. Sterbinsky, D. A. Arena, P. Shafer, E. Arenholz, B. A. Davidson, A. J. Millis, A. X. Gray, X. X. Xi
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2018
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/b500f5d5b0634a8a90d6a798dfb3a2b5
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spelling	oai:doaj.org-article:b500f5d5b0634a8a90d6a798dfb3a2b52021-12-02T14:40:09ZNature of the metal-insulator transition in few-unit-cell-thick LaNiO3 films10.1038/s41467-018-04546-52041-1723https://doaj.org/article/b500f5d5b0634a8a90d6a798dfb3a2b52018-06-01T00:00:00Zhttps://doi.org/10.1038/s41467-018-04546-5https://doaj.org/toc/2041-1723The electronic behaviour of complex oxides such as LaNiO3 depends on many intrinsic and extrinsic factors, making it challenging to identify microscopic mechanisms. Here the authors demonstrate the influence of oxygen vacancies on the thickness-dependent metal-insulator transition of LaNiO3 films.M. GolalikhaniQ. LeiR. U. ChandrasenaL. KasaeiH. ParkJ. BaiP. OrgianiJ. CistonG. E. SterbinskyD. A. ArenaP. ShaferE. ArenholzB. A. DavidsonA. J. MillisA. X. GrayX. X. XiNature PortfolioarticleScienceQENNature Communications, Vol 9, Iss 1, Pp 1-8 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q M. Golalikhani Q. Lei R. U. Chandrasena L. Kasaei H. Park J. Bai P. Orgiani J. Ciston G. E. Sterbinsky D. A. Arena P. Shafer E. Arenholz B. A. Davidson A. J. Millis A. X. Gray X. X. Xi Nature of the metal-insulator transition in few-unit-cell-thick LaNiO3 films
description	The electronic behaviour of complex oxides such as LaNiO3 depends on many intrinsic and extrinsic factors, making it challenging to identify microscopic mechanisms. Here the authors demonstrate the influence of oxygen vacancies on the thickness-dependent metal-insulator transition of LaNiO3 films.
format	article
author	M. Golalikhani Q. Lei R. U. Chandrasena L. Kasaei H. Park J. Bai P. Orgiani J. Ciston G. E. Sterbinsky D. A. Arena P. Shafer E. Arenholz B. A. Davidson A. J. Millis A. X. Gray X. X. Xi
author_facet	M. Golalikhani Q. Lei R. U. Chandrasena L. Kasaei H. Park J. Bai P. Orgiani J. Ciston G. E. Sterbinsky D. A. Arena P. Shafer E. Arenholz B. A. Davidson A. J. Millis A. X. Gray X. X. Xi
author_sort	M. Golalikhani
title	Nature of the metal-insulator transition in few-unit-cell-thick LaNiO3 films
title_short	Nature of the metal-insulator transition in few-unit-cell-thick LaNiO3 films
title_full	Nature of the metal-insulator transition in few-unit-cell-thick LaNiO3 films
title_fullStr	Nature of the metal-insulator transition in few-unit-cell-thick LaNiO3 films
title_full_unstemmed	Nature of the metal-insulator transition in few-unit-cell-thick LaNiO3 films
title_sort	nature of the metal-insulator transition in few-unit-cell-thick lanio3 films
publisher	Nature Portfolio
publishDate	2018
url	https://doaj.org/article/b500f5d5b0634a8a90d6a798dfb3a2b5
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Nature of the metal-insulator transition in few-unit-cell-thick LaNiO3 films

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