Stability and molecular pathways to the formation of spin defects in silicon carbide
Understanding the mechanism of formation of solid-state spin defects underpins their future applications in quantum technologies. Here, the authors use a combination of ab initio molecular dynamics, enhanced sampling, and density functional theory to clarify the formation process of spin defects in...
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Auteurs principaux: | , , , |
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Format: | article |
Langue: | EN |
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Nature Portfolio
2021
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Accès en ligne: | https://doaj.org/article/b9006e59aa644ff98a5c3dc4a8e9e32d |
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