Stability and molecular pathways to the formation of spin defects in silicon carbide

Understanding the mechanism of formation of solid-state spin defects underpins their future applications in quantum technologies. Here, the authors use a combination of ab initio molecular dynamics, enhanced sampling, and density functional theory to clarify the formation process of spin defects in...

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Enregistré dans:
Détails bibliographiques
Auteurs principaux: Elizabeth M. Y. Lee, Alvin Yu, Juan J. de Pablo, Giulia Galli
Format: article
Langue:EN
Publié: Nature Portfolio 2021
Sujets:
Q
Accès en ligne:https://doaj.org/article/b9006e59aa644ff98a5c3dc4a8e9e32d
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