Stability and molecular pathways to the formation of spin defects in silicon carbide

Understanding the mechanism of formation of solid-state spin defects underpins their future applications in quantum technologies. Here, the authors use a combination of ab initio molecular dynamics, enhanced sampling, and density functional theory to clarify the formation process of spin defects in...

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Autores principales:	Elizabeth M. Y. Lee, Alvin Yu, Juan J. de Pablo, Giulia Galli
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/b9006e59aa644ff98a5c3dc4a8e9e32d
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id	oai:doaj.org-article:b9006e59aa644ff98a5c3dc4a8e9e32d
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spelling	oai:doaj.org-article:b9006e59aa644ff98a5c3dc4a8e9e32d2021-11-08T11:07:38ZStability and molecular pathways to the formation of spin defects in silicon carbide10.1038/s41467-021-26419-02041-1723https://doaj.org/article/b9006e59aa644ff98a5c3dc4a8e9e32d2021-11-01T00:00:00Zhttps://doi.org/10.1038/s41467-021-26419-0https://doaj.org/toc/2041-1723Understanding the mechanism of formation of solid-state spin defects underpins their future applications in quantum technologies. Here, the authors use a combination of ab initio molecular dynamics, enhanced sampling, and density functional theory to clarify the formation process of spin defects in silicon carbide.Elizabeth M. Y. LeeAlvin YuJuan J. de PabloGiulia GalliNature PortfolioarticleScienceQENNature Communications, Vol 12, Iss 1, Pp 1-8 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Elizabeth M. Y. Lee Alvin Yu Juan J. de Pablo Giulia Galli Stability and molecular pathways to the formation of spin defects in silicon carbide
description	Understanding the mechanism of formation of solid-state spin defects underpins their future applications in quantum technologies. Here, the authors use a combination of ab initio molecular dynamics, enhanced sampling, and density functional theory to clarify the formation process of spin defects in silicon carbide.
format	article
author	Elizabeth M. Y. Lee Alvin Yu Juan J. de Pablo Giulia Galli
author_facet	Elizabeth M. Y. Lee Alvin Yu Juan J. de Pablo Giulia Galli
author_sort	Elizabeth M. Y. Lee
title	Stability and molecular pathways to the formation of spin defects in silicon carbide
title_short	Stability and molecular pathways to the formation of spin defects in silicon carbide
title_full	Stability and molecular pathways to the formation of spin defects in silicon carbide
title_fullStr	Stability and molecular pathways to the formation of spin defects in silicon carbide
title_full_unstemmed	Stability and molecular pathways to the formation of spin defects in silicon carbide
title_sort	stability and molecular pathways to the formation of spin defects in silicon carbide
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/b9006e59aa644ff98a5c3dc4a8e9e32d
work_keys_str_mv	AT elizabethmylee stabilityandmolecularpathwaystotheformationofspindefectsinsiliconcarbide AT alvinyu stabilityandmolecularpathwaystotheformationofspindefectsinsiliconcarbide AT juanjdepablo stabilityandmolecularpathwaystotheformationofspindefectsinsiliconcarbide AT giuliagalli stabilityandmolecularpathwaystotheformationofspindefectsinsiliconcarbide
_version_	1718442368081854464

Stability and molecular pathways to the formation of spin defects in silicon carbide

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