High-efficiency planarization method combining mechanical polishing and atmospheric-pressure plasma etching for hard-to-machine semiconductor substrates

A high-efficiency planarization technique for preprocessing before final polishing is needed for hard-to-machine wide-band-gap semiconductors, such as silicon carbide (SiC), gallium nitride, and diamond. We proposed a novel planarization method that combines chemical mechanical polishing (CMP) and a...

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Autores principales:	Yasuhisa SANO, Kousuke SHIOZAWA, Toshiro DOI, Syuhei KUROKAWA, Hideo AIDA, Tadakazu MIYASHITA, Kazuto YAMAUCHI
Formato:	article
Lenguaje:	EN
Publicado:	The Japan Society of Mechanical Engineers 2016
Materias:	hard-to-machine materials atmospheric-pressure plasma plasma etching mechanical polishing damaged layer planarization silicon carbide Mechanical engineering and machinery TJ1-1570
Acceso en línea:	https://doaj.org/article/b9327b613ac944f58f38a94382fb8710
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spelling	oai:doaj.org-article:b9327b613ac944f58f38a94382fb87102021-11-26T06:35:12ZHigh-efficiency planarization method combining mechanical polishing and atmospheric-pressure plasma etching for hard-to-machine semiconductor substrates2187-974510.1299/mej.15-00527https://doaj.org/article/b9327b613ac944f58f38a94382fb87102016-01-01T00:00:00Zhttps://www.jstage.jst.go.jp/article/mej/3/1/3_15-00527/_pdf/-char/enhttps://doaj.org/toc/2187-9745A high-efficiency planarization technique for preprocessing before final polishing is needed for hard-to-machine wide-band-gap semiconductors, such as silicon carbide (SiC), gallium nitride, and diamond. We proposed a novel planarization method that combines chemical mechanical polishing (CMP) and atmospheric-pressure plasma etching (plasma chemical vaporization machining [P-CVM]) and developed a prototype of the basic type CMP/P-CVM combined processing system. This prototype has a mechanical polishing part for introducing a damaged layer on the convex part of the sample surface and a P-CVM part for efficient etching of the damaged layer. Process conditions for plasma generation were determined in order to minimize the optical emission intensity ratio of nitrogen to helium because nitrogen comes from circumstance air and should not exist in the plasma region. Process conditions for mechanical polishing were determined in order to efficiently generate a damaged layer only on the convex part of the sample surface. The combined process was performed using a SiC substrate on which the mesa structure was fabricated as a sample. As a result, we found that the convex parts of the mesa structure were preferentially removed and the surface of the sample was planarized. We also found that the decreasing rate of the peak-to-valley value of the mesa structure obtained by CMP/P-CVM combined processing was approximately seven times greater than that during mechanical polishing.Yasuhisa SANOKousuke SHIOZAWAToshiro DOISyuhei KUROKAWAHideo AIDATadakazu MIYASHITAKazuto YAMAUCHIThe Japan Society of Mechanical Engineersarticlehard-to-machine materialsatmospheric-pressure plasmaplasma etchingmechanical polishingdamaged layerplanarizationsilicon carbideMechanical engineering and machineryTJ1-1570ENMechanical Engineering Journal, Vol 3, Iss 1, Pp 15-00527-15-00527 (2016)
institution	DOAJ
collection	DOAJ
language	EN
topic	hard-to-machine materials atmospheric-pressure plasma plasma etching mechanical polishing damaged layer planarization silicon carbide Mechanical engineering and machinery TJ1-1570
spellingShingle	hard-to-machine materials atmospheric-pressure plasma plasma etching mechanical polishing damaged layer planarization silicon carbide Mechanical engineering and machinery TJ1-1570 Yasuhisa SANO Kousuke SHIOZAWA Toshiro DOI Syuhei KUROKAWA Hideo AIDA Tadakazu MIYASHITA Kazuto YAMAUCHI High-efficiency planarization method combining mechanical polishing and atmospheric-pressure plasma etching for hard-to-machine semiconductor substrates
description	A high-efficiency planarization technique for preprocessing before final polishing is needed for hard-to-machine wide-band-gap semiconductors, such as silicon carbide (SiC), gallium nitride, and diamond. We proposed a novel planarization method that combines chemical mechanical polishing (CMP) and atmospheric-pressure plasma etching (plasma chemical vaporization machining [P-CVM]) and developed a prototype of the basic type CMP/P-CVM combined processing system. This prototype has a mechanical polishing part for introducing a damaged layer on the convex part of the sample surface and a P-CVM part for efficient etching of the damaged layer. Process conditions for plasma generation were determined in order to minimize the optical emission intensity ratio of nitrogen to helium because nitrogen comes from circumstance air and should not exist in the plasma region. Process conditions for mechanical polishing were determined in order to efficiently generate a damaged layer only on the convex part of the sample surface. The combined process was performed using a SiC substrate on which the mesa structure was fabricated as a sample. As a result, we found that the convex parts of the mesa structure were preferentially removed and the surface of the sample was planarized. We also found that the decreasing rate of the peak-to-valley value of the mesa structure obtained by CMP/P-CVM combined processing was approximately seven times greater than that during mechanical polishing.
format	article
author	Yasuhisa SANO Kousuke SHIOZAWA Toshiro DOI Syuhei KUROKAWA Hideo AIDA Tadakazu MIYASHITA Kazuto YAMAUCHI
author_facet	Yasuhisa SANO Kousuke SHIOZAWA Toshiro DOI Syuhei KUROKAWA Hideo AIDA Tadakazu MIYASHITA Kazuto YAMAUCHI
author_sort	Yasuhisa SANO
title	High-efficiency planarization method combining mechanical polishing and atmospheric-pressure plasma etching for hard-to-machine semiconductor substrates
title_short	High-efficiency planarization method combining mechanical polishing and atmospheric-pressure plasma etching for hard-to-machine semiconductor substrates
title_full	High-efficiency planarization method combining mechanical polishing and atmospheric-pressure plasma etching for hard-to-machine semiconductor substrates
title_fullStr	High-efficiency planarization method combining mechanical polishing and atmospheric-pressure plasma etching for hard-to-machine semiconductor substrates
title_full_unstemmed	High-efficiency planarization method combining mechanical polishing and atmospheric-pressure plasma etching for hard-to-machine semiconductor substrates
title_sort	high-efficiency planarization method combining mechanical polishing and atmospheric-pressure plasma etching for hard-to-machine semiconductor substrates
publisher	The Japan Society of Mechanical Engineers
publishDate	2016
url	https://doaj.org/article/b9327b613ac944f58f38a94382fb8710
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High-efficiency planarization method combining mechanical polishing and atmospheric-pressure plasma etching for hard-to-machine semiconductor substrates

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