High-efficiency planarization method combining mechanical polishing and atmospheric-pressure plasma etching for hard-to-machine semiconductor substrates

High-efficiency planarization method combining mechanical polishing and atmospheric-pressure plasma etching for hard-to-machine semiconductor substrates

A high-efficiency planarization technique for preprocessing before final polishing is needed for hard-to-machine wide-band-gap semiconductors, such as silicon carbide (SiC), gallium nitride, and diamond. We proposed a novel planarization method that combines chemical mechanical polishing (CMP) and a...

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Autores principales: Yasuhisa SANO, Kousuke SHIOZAWA, Toshiro DOI, Syuhei KUROKAWA, Hideo AIDA, Tadakazu MIYASHITA, Kazuto YAMAUCHI
Formato: article
Lenguaje:EN
Publicado: The Japan Society of Mechanical Engineers 2016
Materias:
hard-to-machine materials
atmospheric-pressure plasma
plasma etching
mechanical polishing
damaged layer
planarization
silicon carbide
Mechanical engineering and machinery
TJ1-1570
Acceso en línea:https://doaj.org/article/b9327b613ac944f58f38a94382fb8710
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https://doaj.org/article/b9327b613ac944f58f38a94382fb8710

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