High-efficiency planarization method combining mechanical polishing and atmospheric-pressure plasma etching for hard-to-machine semiconductor substrates
A high-efficiency planarization technique for preprocessing before final polishing is needed for hard-to-machine wide-band-gap semiconductors, such as silicon carbide (SiC), gallium nitride, and diamond. We proposed a novel planarization method that combines chemical mechanical polishing (CMP) and a...
Guardado en:
| Autores principales: | , , , , , , |
|---|---|
| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
The Japan Society of Mechanical Engineers
2016
|
| Materias: | |
| Acceso en línea: | https://doaj.org/article/b9327b613ac944f58f38a94382fb8710 |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|