Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact

Abstract Due to their wide band gaps, III-N materials can exhibit behaviors ranging from the semiconductor class to the dielectric class. Through an analogy between a Metal/AlGaN/AlN/GaN diode and a MOS contact, we make use of this dual nature and show a direct path to capture the energy band diagra...

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Autores principales: Yannick Baines, Julien Buckley, Jérôme Biscarrat, Gennie Garnier, Matthew Charles, William Vandendaele, Charlotte Gillot, Marc Plissonnier
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2017
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Acceso en línea:https://doaj.org/article/b934c2829f234b79a4d94ddfc114bd65
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