Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact
Abstract Due to their wide band gaps, III-N materials can exhibit behaviors ranging from the semiconductor class to the dielectric class. Through an analogy between a Metal/AlGaN/AlN/GaN diode and a MOS contact, we make use of this dual nature and show a direct path to capture the energy band diagra...
Guardado en:
| Autores principales: | , , , , , , , |
|---|---|
| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2017
|
| Materias: | |
| Acceso en línea: | https://doaj.org/article/b934c2829f234b79a4d94ddfc114bd65 |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|