Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact

Abstract Due to their wide band gaps, III-N materials can exhibit behaviors ranging from the semiconductor class to the dielectric class. Through an analogy between a Metal/AlGaN/AlN/GaN diode and a MOS contact, we make use of this dual nature and show a direct path to capture the energy band diagra...

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Autores principales:	Yannick Baines, Julien Buckley, Jérôme Biscarrat, Gennie Garnier, Matthew Charles, William Vandendaele, Charlotte Gillot, Marc Plissonnier
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/b934c2829f234b79a4d94ddfc114bd65
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spelling	oai:doaj.org-article:b934c2829f234b79a4d94ddfc114bd652021-12-02T11:53:01ZCoherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact10.1038/s41598-017-08307-02045-2322https://doaj.org/article/b934c2829f234b79a4d94ddfc114bd652017-08-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-08307-0https://doaj.org/toc/2045-2322Abstract Due to their wide band gaps, III-N materials can exhibit behaviors ranging from the semiconductor class to the dielectric class. Through an analogy between a Metal/AlGaN/AlN/GaN diode and a MOS contact, we make use of this dual nature and show a direct path to capture the energy band diagram of the nitride system. We then apply transparency calculations to describe the forward conduction regime of a III-N heterojunction diode and demonstrate it realizes a tunnel diode, in contrast to its regular Schottky Barrier Diode designation. Thermionic emission is ruled out and instead, a coherent electron tunneling scenario allows to account for transport at room temperature and higher.Yannick BainesJulien BuckleyJérôme BiscarratGennie GarnierMatthew CharlesWilliam VandendaeleCharlotte GillotMarc PlissonnierNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-10 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Yannick Baines Julien Buckley Jérôme Biscarrat Gennie Garnier Matthew Charles William Vandendaele Charlotte Gillot Marc Plissonnier Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact
description	Abstract Due to their wide band gaps, III-N materials can exhibit behaviors ranging from the semiconductor class to the dielectric class. Through an analogy between a Metal/AlGaN/AlN/GaN diode and a MOS contact, we make use of this dual nature and show a direct path to capture the energy band diagram of the nitride system. We then apply transparency calculations to describe the forward conduction regime of a III-N heterojunction diode and demonstrate it realizes a tunnel diode, in contrast to its regular Schottky Barrier Diode designation. Thermionic emission is ruled out and instead, a coherent electron tunneling scenario allows to account for transport at room temperature and higher.
format	article
author	Yannick Baines Julien Buckley Jérôme Biscarrat Gennie Garnier Matthew Charles William Vandendaele Charlotte Gillot Marc Plissonnier
author_facet	Yannick Baines Julien Buckley Jérôme Biscarrat Gennie Garnier Matthew Charles William Vandendaele Charlotte Gillot Marc Plissonnier
author_sort	Yannick Baines
title	Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact
title_short	Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact
title_full	Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact
title_fullStr	Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact
title_full_unstemmed	Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact
title_sort	coherent tunneling in an algan/aln/gan heterojunction captured through an analogy with a mos contact
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/b934c2829f234b79a4d94ddfc114bd65
work_keys_str_mv	AT yannickbaines coherenttunnelinginanalganalnganheterojunctioncapturedthroughananalogywithamoscontact AT julienbuckley coherenttunnelinginanalganalnganheterojunctioncapturedthroughananalogywithamoscontact AT jeromebiscarrat coherenttunnelinginanalganalnganheterojunctioncapturedthroughananalogywithamoscontact AT genniegarnier coherenttunnelinginanalganalnganheterojunctioncapturedthroughananalogywithamoscontact AT matthewcharles coherenttunnelinginanalganalnganheterojunctioncapturedthroughananalogywithamoscontact AT williamvandendaele coherenttunnelinginanalganalnganheterojunctioncapturedthroughananalogywithamoscontact AT charlottegillot coherenttunnelinginanalganalnganheterojunctioncapturedthroughananalogywithamoscontact AT marcplissonnier coherenttunnelinginanalganalnganheterojunctioncapturedthroughananalogywithamoscontact
_version_	1718394948774002688

Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact

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