Influences of the Temperature on the Electrical Properties of HfO<sub>2</sub>-Based Resistive Switching Devices

Influences of the Temperature on the Electrical Properties of HfO<sub>2</sub>-Based Resistive Switching Devices

In the attempt to understand the behavior of HfO<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>2</mn></msub></semantics></math></inline-formul...

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Autores principales: Héctor García, Jonathan Boo, Guillermo Vinuesa, Óscar G. Ossorio, Benjamín Sahelices, Salvador Dueñas, Helena Castán, Mireia B. González, Francesca Campabadal
Formato: article
Lenguaje:EN
Publicado: MDPI AG 2021
Materias:
resistive switching
ReRAM devices
neuromorphic computing
conduction mechanisms
Electronics
TK7800-8360
Acceso en línea:https://doaj.org/article/ba4113821fa7498687c8aae8e0ec5fa3
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https://doaj.org/article/ba4113821fa7498687c8aae8e0ec5fa3

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