Influences of the Temperature on the Electrical Properties of HfO<sub>2</sub>-Based Resistive Switching Devices
In the attempt to understand the behavior of HfO<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>2</mn></msub></semantics></math></inline-formul...
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oai:doaj.org-article:ba4113821fa7498687c8aae8e0ec5fa32021-11-25T17:24:53ZInfluences of the Temperature on the Electrical Properties of HfO<sub>2</sub>-Based Resistive Switching Devices10.3390/electronics102228162079-9292https://doaj.org/article/ba4113821fa7498687c8aae8e0ec5fa32021-11-01T00:00:00Zhttps://www.mdpi.com/2079-9292/10/22/2816https://doaj.org/toc/2079-9292In the attempt to understand the behavior of HfO<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>2</mn></msub></semantics></math></inline-formula>-based resistive switching devices at low temperatures, TiN/Ti/HfO<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>2</mn></msub></semantics></math></inline-formula>/W metal–insulator–metal devices were fabricated; the atomic layer deposition technique was used to grow the high-k layer. After performing an electroforming process at room temperature, the device was cooled in a cryostat to carry out 100 current–voltage cycles at several temperatures ranging from the “liquid nitrogen temperature” to 350 K. The measurements showed a semiconducting behavior in high and low resistance states. In the low resistance state, a hopping conduction mechanism was obtained. The set and reset voltages increased when temperature decreased because the thermal energies for oxygen vacancies and ions were reduced. However, the temperature did not influence the power absorbed in the reset transition, indicating the local temperature in the filament controls the transition. The set transition turned from gradual to abrupt when decreasing the temperature, due to a positive feedback between the current increase and the Joule heating at low temperatures.Héctor GarcíaJonathan BooGuillermo VinuesaÓscar G. OssorioBenjamín SahelicesSalvador DueñasHelena CastánMireia B. GonzálezFrancesca CampabadalMDPI AGarticleresistive switchingReRAM devicesneuromorphic computingconduction mechanismsElectronicsTK7800-8360ENElectronics, Vol 10, Iss 2816, p 2816 (2021) |
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DOAJ |
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| language |
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resistive switching ReRAM devices neuromorphic computing conduction mechanisms Electronics TK7800-8360 |
| spellingShingle |
resistive switching ReRAM devices neuromorphic computing conduction mechanisms Electronics TK7800-8360 Héctor García Jonathan Boo Guillermo Vinuesa Óscar G. Ossorio Benjamín Sahelices Salvador Dueñas Helena Castán Mireia B. González Francesca Campabadal Influences of the Temperature on the Electrical Properties of HfO<sub>2</sub>-Based Resistive Switching Devices |
| description |
In the attempt to understand the behavior of HfO<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>2</mn></msub></semantics></math></inline-formula>-based resistive switching devices at low temperatures, TiN/Ti/HfO<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>2</mn></msub></semantics></math></inline-formula>/W metal–insulator–metal devices were fabricated; the atomic layer deposition technique was used to grow the high-k layer. After performing an electroforming process at room temperature, the device was cooled in a cryostat to carry out 100 current–voltage cycles at several temperatures ranging from the “liquid nitrogen temperature” to 350 K. The measurements showed a semiconducting behavior in high and low resistance states. In the low resistance state, a hopping conduction mechanism was obtained. The set and reset voltages increased when temperature decreased because the thermal energies for oxygen vacancies and ions were reduced. However, the temperature did not influence the power absorbed in the reset transition, indicating the local temperature in the filament controls the transition. The set transition turned from gradual to abrupt when decreasing the temperature, due to a positive feedback between the current increase and the Joule heating at low temperatures. |
| format |
article |
| author |
Héctor García Jonathan Boo Guillermo Vinuesa Óscar G. Ossorio Benjamín Sahelices Salvador Dueñas Helena Castán Mireia B. González Francesca Campabadal |
| author_facet |
Héctor García Jonathan Boo Guillermo Vinuesa Óscar G. Ossorio Benjamín Sahelices Salvador Dueñas Helena Castán Mireia B. González Francesca Campabadal |
| author_sort |
Héctor García |
| title |
Influences of the Temperature on the Electrical Properties of HfO<sub>2</sub>-Based Resistive Switching Devices |
| title_short |
Influences of the Temperature on the Electrical Properties of HfO<sub>2</sub>-Based Resistive Switching Devices |
| title_full |
Influences of the Temperature on the Electrical Properties of HfO<sub>2</sub>-Based Resistive Switching Devices |
| title_fullStr |
Influences of the Temperature on the Electrical Properties of HfO<sub>2</sub>-Based Resistive Switching Devices |
| title_full_unstemmed |
Influences of the Temperature on the Electrical Properties of HfO<sub>2</sub>-Based Resistive Switching Devices |
| title_sort |
influences of the temperature on the electrical properties of hfo<sub>2</sub>-based resistive switching devices |
| publisher |
MDPI AG |
| publishDate |
2021 |
| url |
https://doaj.org/article/ba4113821fa7498687c8aae8e0ec5fa3 |
| work_keys_str_mv |
AT hectorgarcia influencesofthetemperatureontheelectricalpropertiesofhfosub2subbasedresistiveswitchingdevices AT jonathanboo influencesofthetemperatureontheelectricalpropertiesofhfosub2subbasedresistiveswitchingdevices AT guillermovinuesa influencesofthetemperatureontheelectricalpropertiesofhfosub2subbasedresistiveswitchingdevices AT oscargossorio influencesofthetemperatureontheelectricalpropertiesofhfosub2subbasedresistiveswitchingdevices AT benjaminsahelices influencesofthetemperatureontheelectricalpropertiesofhfosub2subbasedresistiveswitchingdevices AT salvadorduenas influencesofthetemperatureontheelectricalpropertiesofhfosub2subbasedresistiveswitchingdevices AT helenacastan influencesofthetemperatureontheelectricalpropertiesofhfosub2subbasedresistiveswitchingdevices AT mireiabgonzalez influencesofthetemperatureontheelectricalpropertiesofhfosub2subbasedresistiveswitchingdevices AT francescacampabadal influencesofthetemperatureontheelectricalpropertiesofhfosub2subbasedresistiveswitchingdevices |
| _version_ |
1718412432765878272 |