Temperature Gradient ZnO Deposited via ALD for High-Performance Transistor Applications
This work reports an alternative atomic layer deposition (ALD) method to fabricate ZnO thin-film transistors (TFTs). The ZnO film is deposited with temperature naturally-cooling process from 200 to 100°C, called a “temperature gradient ZnO (TG-ZnO)”). After optimized...
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| Autores principales: | , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
IEEE
2020
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/bc1bc0b4c6fd4ffaa6028db1de49fac2 |
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