Cita APA (7a ed.)

Che, B., Zhang, H., Yang, J., Qi, J., Ding, X., & Zhang, J. (2020). Temperature Gradient ZnO Deposited via ALD for High-Performance Transistor Applications. IEEE.

Cita Chicago Style (17a ed.)

Che, Bowen, Hao Zhang, Jun Yang, Jie Qi, Xingwei Ding, y Jianhua Zhang. Temperature Gradient ZnO Deposited via ALD for High-Performance Transistor Applications. IEEE, 2020.

Cita MLA (8a ed.)

Che, Bowen, et al. Temperature Gradient ZnO Deposited via ALD for High-Performance Transistor Applications. IEEE, 2020.