Style de citation APA (7e éd.)

Che, B., Zhang, H., Yang, J., Qi, J., Ding, X., & Zhang, J. (2020). Temperature Gradient ZnO Deposited via ALD for High-Performance Transistor Applications. IEEE.

Style de citation Chicago (17e éd.)

Che, Bowen, Hao Zhang, Jun Yang, Jie Qi, Xingwei Ding, et Jianhua Zhang. Temperature Gradient ZnO Deposited via ALD for High-Performance Transistor Applications. IEEE, 2020.

Style de citation MLA (8e éd.)

Che, Bowen, et al. Temperature Gradient ZnO Deposited via ALD for High-Performance Transistor Applications. IEEE, 2020.