Temperature Gradient ZnO Deposited via ALD for High-Performance Transistor Applications

This work reports an alternative atomic layer deposition (ALD) method to fabricate ZnO thin-film transistors (TFTs). The ZnO film is deposited with temperature naturally-cooling process from 200 to 100°C, called a “temperature gradient ZnO (TG-ZnO)”). After optimized...

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Autores principales:	Bowen Che, Hao Zhang, Jun Yang, Jie Qi, Xingwei Ding, Jianhua Zhang
Formato:	article
Lenguaje:	EN
Publicado:	IEEE 2020
Materias:	Thin-film transistors temperature gradient ZnO atomic layer deposition oxygen vacancy Electrical engineering. Electronics. Nuclear engineering TK1-9971
Acceso en línea:	https://doaj.org/article/bc1bc0b4c6fd4ffaa6028db1de49fac2
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spelling	oai:doaj.org-article:bc1bc0b4c6fd4ffaa6028db1de49fac22021-11-19T00:01:56ZTemperature Gradient ZnO Deposited via ALD for High-Performance Transistor Applications2168-673410.1109/JEDS.2020.3015030https://doaj.org/article/bc1bc0b4c6fd4ffaa6028db1de49fac22020-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/9162063/https://doaj.org/toc/2168-6734This work reports an alternative atomic layer deposition (ALD) method to fabricate ZnO thin-film transistors (TFTs). The ZnO film is deposited with temperature naturally-cooling process from 200 to 100°C, called a “temperature gradient ZnO (TG-ZnO)”). After optimized annealing treatment at 300°C, the TG-ZnO TFT shows an excellent performance compared to those fabricated with traditional constant temperature deposition, including a high saturation mobility <inline-formula> <tex-math notation="LaTeX">$\left(\mu_{\text {sat }}\right)$ </tex-math></inline-formula> of 11.8 cm<sup>2</sup>/Vs, which is 5 times higher than the ZnO TFT, a good on/off-state current ratio <inline-formula> <tex-math notation="LaTeX">$\left(I_{\mathrm{on}} / I_{\mathrm{off}}\right)$ </tex-math></inline-formula> of <inline-formula> <tex-math notation="LaTeX">$1.9 \times 10^{7}$ </tex-math></inline-formula>, a small subthreshold swing (<inline-formula> <tex-math notation="LaTeX">$SS$ </tex-math></inline-formula>) of 175 mV/decade and a threshold voltage <inline-formula> <tex-math notation="LaTeX">$\left(V_{\mathrm{th}}\right)$ </tex-math></inline-formula> of 1.1 V. Meanwhile, the TG-ZnO TFT has better crystallization than 100°C-ZnO and lower oxygen vacancies than 200°C-ZnO. These characters enable the TG-ZnO TFT not only to maintain a high mobility, but also to present a satisfactory <inline-formula> <tex-math notation="LaTeX">$I_{\mathrm{on}} / I_{\mathrm{off}}$ </tex-math></inline-formula> ratio. This promising deposition technique provides a new idea for fabricating TFTs with high mobility.Bowen CheHao ZhangJun YangJie QiXingwei DingJianhua ZhangIEEEarticleThin-film transistorstemperature gradient ZnOatomic layer depositionoxygen vacancyElectrical engineering. Electronics. Nuclear engineeringTK1-9971ENIEEE Journal of the Electron Devices Society, Vol 8, Pp 885-889 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	Thin-film transistors temperature gradient ZnO atomic layer deposition oxygen vacancy Electrical engineering. Electronics. Nuclear engineering TK1-9971
spellingShingle	Thin-film transistors temperature gradient ZnO atomic layer deposition oxygen vacancy Electrical engineering. Electronics. Nuclear engineering TK1-9971 Bowen Che Hao Zhang Jun Yang Jie Qi Xingwei Ding Jianhua Zhang Temperature Gradient ZnO Deposited via ALD for High-Performance Transistor Applications
description	This work reports an alternative atomic layer deposition (ALD) method to fabricate ZnO thin-film transistors (TFTs). The ZnO film is deposited with temperature naturally-cooling process from 200 to 100°C, called a “temperature gradient ZnO (TG-ZnO)”). After optimized annealing treatment at 300°C, the TG-ZnO TFT shows an excellent performance compared to those fabricated with traditional constant temperature deposition, including a high saturation mobility <inline-formula> <tex-math notation="LaTeX">$\left(\mu_{\text {sat }}\right)$ </tex-math></inline-formula> of 11.8 cm<sup>2</sup>/Vs, which is 5 times higher than the ZnO TFT, a good on/off-state current ratio <inline-formula> <tex-math notation="LaTeX">$\left(I_{\mathrm{on}} / I_{\mathrm{off}}\right)$ </tex-math></inline-formula> of <inline-formula> <tex-math notation="LaTeX">$1.9 \times 10^{7}$ </tex-math></inline-formula>, a small subthreshold swing (<inline-formula> <tex-math notation="LaTeX">$SS$ </tex-math></inline-formula>) of 175 mV/decade and a threshold voltage <inline-formula> <tex-math notation="LaTeX">$\left(V_{\mathrm{th}}\right)$ </tex-math></inline-formula> of 1.1 V. Meanwhile, the TG-ZnO TFT has better crystallization than 100°C-ZnO and lower oxygen vacancies than 200°C-ZnO. These characters enable the TG-ZnO TFT not only to maintain a high mobility, but also to present a satisfactory <inline-formula> <tex-math notation="LaTeX">$I_{\mathrm{on}} / I_{\mathrm{off}}$ </tex-math></inline-formula> ratio. This promising deposition technique provides a new idea for fabricating TFTs with high mobility.
format	article
author	Bowen Che Hao Zhang Jun Yang Jie Qi Xingwei Ding Jianhua Zhang
author_facet	Bowen Che Hao Zhang Jun Yang Jie Qi Xingwei Ding Jianhua Zhang
author_sort	Bowen Che
title	Temperature Gradient ZnO Deposited via ALD for High-Performance Transistor Applications
title_short	Temperature Gradient ZnO Deposited via ALD for High-Performance Transistor Applications
title_full	Temperature Gradient ZnO Deposited via ALD for High-Performance Transistor Applications
title_fullStr	Temperature Gradient ZnO Deposited via ALD for High-Performance Transistor Applications
title_full_unstemmed	Temperature Gradient ZnO Deposited via ALD for High-Performance Transistor Applications
title_sort	temperature gradient zno deposited via ald for high-performance transistor applications
publisher	IEEE
publishDate	2020
url	https://doaj.org/article/bc1bc0b4c6fd4ffaa6028db1de49fac2
work_keys_str_mv	AT bowenche temperaturegradientznodepositedviaaldforhighperformancetransistorapplications AT haozhang temperaturegradientznodepositedviaaldforhighperformancetransistorapplications AT junyang temperaturegradientznodepositedviaaldforhighperformancetransistorapplications AT jieqi temperaturegradientznodepositedviaaldforhighperformancetransistorapplications AT xingweiding temperaturegradientznodepositedviaaldforhighperformancetransistorapplications AT jianhuazhang temperaturegradientznodepositedviaaldforhighperformancetransistorapplications
_version_	1718420690340675584

Temperature Gradient ZnO Deposited via ALD for High-Performance Transistor Applications

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