Temperature Gradient ZnO Deposited via ALD for High-Performance Transistor Applications
This work reports an alternative atomic layer deposition (ALD) method to fabricate ZnO thin-film transistors (TFTs). The ZnO film is deposited with temperature naturally-cooling process from 200 to 100°C, called a “temperature gradient ZnO (TG-ZnO)”). After optimized...
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| Main Authors: | , , , , , |
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| Format: | article |
| Language: | EN |
| Published: |
IEEE
2020
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| Subjects: | |
| Online Access: | https://doaj.org/article/bc1bc0b4c6fd4ffaa6028db1de49fac2 |
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