Achieving surface recombination velocity below 10 cm/s in n-type germanium using ALD Al2O3
Desirable intrinsic properties, namely, narrow bandgap and high carrier mobility, make germanium (Ge) an excellent candidate for various applications, such as radiation detectors, multi-junction solar cells, and field effect transistors. Nevertheless, efficient surface passivation of Ge has been an...
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| Autores principales: | , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
AIP Publishing LLC
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/bd532dc1f16748809a790a0a9f15e4db |
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