Achieving surface recombination velocity below 10 cm/s in n-type germanium using ALD Al2O3

Desirable intrinsic properties, namely, narrow bandgap and high carrier mobility, make germanium (Ge) an excellent candidate for various applications, such as radiation detectors, multi-junction solar cells, and field effect transistors. Nevertheless, efficient surface passivation of Ge has been an...

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Autores principales:	Joonas Isometsä, Tsun Hang Fung, Toni P. Pasanen, Hanchen Liu, Marko Yli-koski, Ville Vähänissi, Hele Savin
Formato:	article
Lenguaje:	EN
Publicado:	AIP Publishing LLC 2021
Materias:	Biotechnology TP248.13-248.65 Physics QC1-999
Acceso en línea:	https://doaj.org/article/bd532dc1f16748809a790a0a9f15e4db
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spelling	oai:doaj.org-article:bd532dc1f16748809a790a0a9f15e4db2021-12-01T18:51:23ZAchieving surface recombination velocity below 10 cm/s in n-type germanium using ALD Al2O32166-532X10.1063/5.0071552https://doaj.org/article/bd532dc1f16748809a790a0a9f15e4db2021-11-01T00:00:00Zhttp://dx.doi.org/10.1063/5.0071552https://doaj.org/toc/2166-532XDesirable intrinsic properties, namely, narrow bandgap and high carrier mobility, make germanium (Ge) an excellent candidate for various applications, such as radiation detectors, multi-junction solar cells, and field effect transistors. Nevertheless, efficient surface passivation of Ge has been an everlasting challenge. In this work, we tackle this problem by applying thermal atomic layer deposited (ALD) aluminum oxide (Al2O3), with special focus on the process steps carried out prior to and after dielectric film deposition. Our results show that instead of conventional hydrofluoric acid (HF) dip, hydrochloric acid (HCI) pre-treatment is an essential process step needed to reach surface recombination velocities (SRVs) below 10 cm/s. The main reason for efficient surface passivation is found to be a high dielectric charge that promotes the so-called field-effect passivation. Furthermore, the results demonstrate that the post-deposition anneal temperature, time, and ambient play a role in passivating Ge-dangling bonds, but surprisingly, good surface passivation (SRV below 26 cm/s) is obtained even without any post-deposition annealing. The results pave the way for high-performance n-type Ge optoelectronic devices that could use induced junctions via negatively charged Al2O3 layers.Joonas IsometsäTsun Hang FungToni P. PasanenHanchen LiuMarko Yli-koskiVille VähänissiHele SavinAIP Publishing LLCarticleBiotechnologyTP248.13-248.65PhysicsQC1-999ENAPL Materials, Vol 9, Iss 11, Pp 111113-111113-7 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Biotechnology TP248.13-248.65 Physics QC1-999
spellingShingle	Biotechnology TP248.13-248.65 Physics QC1-999 Joonas Isometsä Tsun Hang Fung Toni P. Pasanen Hanchen Liu Marko Yli-koski Ville Vähänissi Hele Savin Achieving surface recombination velocity below 10 cm/s in n-type germanium using ALD Al2O3
description	Desirable intrinsic properties, namely, narrow bandgap and high carrier mobility, make germanium (Ge) an excellent candidate for various applications, such as radiation detectors, multi-junction solar cells, and field effect transistors. Nevertheless, efficient surface passivation of Ge has been an everlasting challenge. In this work, we tackle this problem by applying thermal atomic layer deposited (ALD) aluminum oxide (Al2O3), with special focus on the process steps carried out prior to and after dielectric film deposition. Our results show that instead of conventional hydrofluoric acid (HF) dip, hydrochloric acid (HCI) pre-treatment is an essential process step needed to reach surface recombination velocities (SRVs) below 10 cm/s. The main reason for efficient surface passivation is found to be a high dielectric charge that promotes the so-called field-effect passivation. Furthermore, the results demonstrate that the post-deposition anneal temperature, time, and ambient play a role in passivating Ge-dangling bonds, but surprisingly, good surface passivation (SRV below 26 cm/s) is obtained even without any post-deposition annealing. The results pave the way for high-performance n-type Ge optoelectronic devices that could use induced junctions via negatively charged Al2O3 layers.
format	article
author	Joonas Isometsä Tsun Hang Fung Toni P. Pasanen Hanchen Liu Marko Yli-koski Ville Vähänissi Hele Savin
author_facet	Joonas Isometsä Tsun Hang Fung Toni P. Pasanen Hanchen Liu Marko Yli-koski Ville Vähänissi Hele Savin
author_sort	Joonas Isometsä
title	Achieving surface recombination velocity below 10 cm/s in n-type germanium using ALD Al2O3
title_short	Achieving surface recombination velocity below 10 cm/s in n-type germanium using ALD Al2O3
title_full	Achieving surface recombination velocity below 10 cm/s in n-type germanium using ALD Al2O3
title_fullStr	Achieving surface recombination velocity below 10 cm/s in n-type germanium using ALD Al2O3
title_full_unstemmed	Achieving surface recombination velocity below 10 cm/s in n-type germanium using ALD Al2O3
title_sort	achieving surface recombination velocity below 10 cm/s in n-type germanium using ald al2o3
publisher	AIP Publishing LLC
publishDate	2021
url	https://doaj.org/article/bd532dc1f16748809a790a0a9f15e4db
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Achieving surface recombination velocity below 10 cm/s in n-type germanium using ALD Al2O3

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