Optical charge state control of spin defects in 4H-SiC
Defects in silicon carbide represent a viable candidate for realization of spin qubits. Here, the authors show stable bidirectional charge state conversion for the silicon vacancy and divacancy, improving the photoluminescence intensity by up to three orders of magnitude with no effect on spin coher...
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| Autores principales: | , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2017
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/be088d1187a647b0ae1901a5513f10bc |
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