Optical charge state control of spin defects in 4H-SiC

Defects in silicon carbide represent a viable candidate for realization of spin qubits. Here, the authors show stable bidirectional charge state conversion for the silicon vacancy and divacancy, improving the photoluminescence intensity by up to three orders of magnitude with no effect on spin coher...

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Autores principales: Gary Wolfowicz, Christopher P. Anderson, Andrew L. Yeats, Samuel J. Whiteley, Jens Niklas, Oleg G. Poluektov, F. Joseph Heremans, David D. Awschalom
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2017
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Acceso en línea:https://doaj.org/article/be088d1187a647b0ae1901a5513f10bc
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spelling oai:doaj.org-article:be088d1187a647b0ae1901a5513f10bc2021-12-02T17:01:25ZOptical charge state control of spin defects in 4H-SiC10.1038/s41467-017-01993-42041-1723https://doaj.org/article/be088d1187a647b0ae1901a5513f10bc2017-11-01T00:00:00Zhttps://doi.org/10.1038/s41467-017-01993-4https://doaj.org/toc/2041-1723Defects in silicon carbide represent a viable candidate for realization of spin qubits. Here, the authors show stable bidirectional charge state conversion for the silicon vacancy and divacancy, improving the photoluminescence intensity by up to three orders of magnitude with no effect on spin coherence.Gary WolfowiczChristopher P. AndersonAndrew L. YeatsSamuel J. WhiteleyJens NiklasOleg G. PoluektovF. Joseph HeremansDavid D. AwschalomNature PortfolioarticleScienceQENNature Communications, Vol 8, Iss 1, Pp 1-9 (2017)
institution DOAJ
collection DOAJ
language EN
topic Science
Q
spellingShingle Science
Q
Gary Wolfowicz
Christopher P. Anderson
Andrew L. Yeats
Samuel J. Whiteley
Jens Niklas
Oleg G. Poluektov
F. Joseph Heremans
David D. Awschalom
Optical charge state control of spin defects in 4H-SiC
description Defects in silicon carbide represent a viable candidate for realization of spin qubits. Here, the authors show stable bidirectional charge state conversion for the silicon vacancy and divacancy, improving the photoluminescence intensity by up to three orders of magnitude with no effect on spin coherence.
format article
author Gary Wolfowicz
Christopher P. Anderson
Andrew L. Yeats
Samuel J. Whiteley
Jens Niklas
Oleg G. Poluektov
F. Joseph Heremans
David D. Awschalom
author_facet Gary Wolfowicz
Christopher P. Anderson
Andrew L. Yeats
Samuel J. Whiteley
Jens Niklas
Oleg G. Poluektov
F. Joseph Heremans
David D. Awschalom
author_sort Gary Wolfowicz
title Optical charge state control of spin defects in 4H-SiC
title_short Optical charge state control of spin defects in 4H-SiC
title_full Optical charge state control of spin defects in 4H-SiC
title_fullStr Optical charge state control of spin defects in 4H-SiC
title_full_unstemmed Optical charge state control of spin defects in 4H-SiC
title_sort optical charge state control of spin defects in 4h-sic
publisher Nature Portfolio
publishDate 2017
url https://doaj.org/article/be088d1187a647b0ae1901a5513f10bc
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