Optical charge state control of spin defects in 4H-SiC

Defects in silicon carbide represent a viable candidate for realization of spin qubits. Here, the authors show stable bidirectional charge state conversion for the silicon vacancy and divacancy, improving the photoluminescence intensity by up to three orders of magnitude with no effect on spin coher...

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Autores principales:	Gary Wolfowicz, Christopher P. Anderson, Andrew L. Yeats, Samuel J. Whiteley, Jens Niklas, Oleg G. Poluektov, F. Joseph Heremans, David D. Awschalom
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/be088d1187a647b0ae1901a5513f10bc
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spelling	oai:doaj.org-article:be088d1187a647b0ae1901a5513f10bc2021-12-02T17:01:25ZOptical charge state control of spin defects in 4H-SiC10.1038/s41467-017-01993-42041-1723https://doaj.org/article/be088d1187a647b0ae1901a5513f10bc2017-11-01T00:00:00Zhttps://doi.org/10.1038/s41467-017-01993-4https://doaj.org/toc/2041-1723Defects in silicon carbide represent a viable candidate for realization of spin qubits. Here, the authors show stable bidirectional charge state conversion for the silicon vacancy and divacancy, improving the photoluminescence intensity by up to three orders of magnitude with no effect on spin coherence.Gary WolfowiczChristopher P. AndersonAndrew L. YeatsSamuel J. WhiteleyJens NiklasOleg G. PoluektovF. Joseph HeremansDavid D. AwschalomNature PortfolioarticleScienceQENNature Communications, Vol 8, Iss 1, Pp 1-9 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Gary Wolfowicz Christopher P. Anderson Andrew L. Yeats Samuel J. Whiteley Jens Niklas Oleg G. Poluektov F. Joseph Heremans David D. Awschalom Optical charge state control of spin defects in 4H-SiC
description	Defects in silicon carbide represent a viable candidate for realization of spin qubits. Here, the authors show stable bidirectional charge state conversion for the silicon vacancy and divacancy, improving the photoluminescence intensity by up to three orders of magnitude with no effect on spin coherence.
format	article
author	Gary Wolfowicz Christopher P. Anderson Andrew L. Yeats Samuel J. Whiteley Jens Niklas Oleg G. Poluektov F. Joseph Heremans David D. Awschalom
author_facet	Gary Wolfowicz Christopher P. Anderson Andrew L. Yeats Samuel J. Whiteley Jens Niklas Oleg G. Poluektov F. Joseph Heremans David D. Awschalom
author_sort	Gary Wolfowicz
title	Optical charge state control of spin defects in 4H-SiC
title_short	Optical charge state control of spin defects in 4H-SiC
title_full	Optical charge state control of spin defects in 4H-SiC
title_fullStr	Optical charge state control of spin defects in 4H-SiC
title_full_unstemmed	Optical charge state control of spin defects in 4H-SiC
title_sort	optical charge state control of spin defects in 4h-sic
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/be088d1187a647b0ae1901a5513f10bc
work_keys_str_mv	AT garywolfowicz opticalchargestatecontrolofspindefectsin4hsic AT christopherpanderson opticalchargestatecontrolofspindefectsin4hsic AT andrewlyeats opticalchargestatecontrolofspindefectsin4hsic AT samueljwhiteley opticalchargestatecontrolofspindefectsin4hsic AT jensniklas opticalchargestatecontrolofspindefectsin4hsic AT oleggpoluektov opticalchargestatecontrolofspindefectsin4hsic AT fjosephheremans opticalchargestatecontrolofspindefectsin4hsic AT daviddawschalom opticalchargestatecontrolofspindefectsin4hsic
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Optical charge state control of spin defects in 4H-SiC

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