Optical charge state control of spin defects in 4H-SiC
Defects in silicon carbide represent a viable candidate for realization of spin qubits. Here, the authors show stable bidirectional charge state conversion for the silicon vacancy and divacancy, improving the photoluminescence intensity by up to three orders of magnitude with no effect on spin coher...
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Nature Portfolio
2017
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oai:doaj.org-article:be088d1187a647b0ae1901a5513f10bc2021-12-02T17:01:25ZOptical charge state control of spin defects in 4H-SiC10.1038/s41467-017-01993-42041-1723https://doaj.org/article/be088d1187a647b0ae1901a5513f10bc2017-11-01T00:00:00Zhttps://doi.org/10.1038/s41467-017-01993-4https://doaj.org/toc/2041-1723Defects in silicon carbide represent a viable candidate for realization of spin qubits. Here, the authors show stable bidirectional charge state conversion for the silicon vacancy and divacancy, improving the photoluminescence intensity by up to three orders of magnitude with no effect on spin coherence.Gary WolfowiczChristopher P. AndersonAndrew L. YeatsSamuel J. WhiteleyJens NiklasOleg G. PoluektovF. Joseph HeremansDavid D. AwschalomNature PortfolioarticleScienceQENNature Communications, Vol 8, Iss 1, Pp 1-9 (2017) |
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DOAJ |
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DOAJ |
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EN |
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Science Q |
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Science Q Gary Wolfowicz Christopher P. Anderson Andrew L. Yeats Samuel J. Whiteley Jens Niklas Oleg G. Poluektov F. Joseph Heremans David D. Awschalom Optical charge state control of spin defects in 4H-SiC |
description |
Defects in silicon carbide represent a viable candidate for realization of spin qubits. Here, the authors show stable bidirectional charge state conversion for the silicon vacancy and divacancy, improving the photoluminescence intensity by up to three orders of magnitude with no effect on spin coherence. |
format |
article |
author |
Gary Wolfowicz Christopher P. Anderson Andrew L. Yeats Samuel J. Whiteley Jens Niklas Oleg G. Poluektov F. Joseph Heremans David D. Awschalom |
author_facet |
Gary Wolfowicz Christopher P. Anderson Andrew L. Yeats Samuel J. Whiteley Jens Niklas Oleg G. Poluektov F. Joseph Heremans David D. Awschalom |
author_sort |
Gary Wolfowicz |
title |
Optical charge state control of spin defects in 4H-SiC |
title_short |
Optical charge state control of spin defects in 4H-SiC |
title_full |
Optical charge state control of spin defects in 4H-SiC |
title_fullStr |
Optical charge state control of spin defects in 4H-SiC |
title_full_unstemmed |
Optical charge state control of spin defects in 4H-SiC |
title_sort |
optical charge state control of spin defects in 4h-sic |
publisher |
Nature Portfolio |
publishDate |
2017 |
url |
https://doaj.org/article/be088d1187a647b0ae1901a5513f10bc |
work_keys_str_mv |
AT garywolfowicz opticalchargestatecontrolofspindefectsin4hsic AT christopherpanderson opticalchargestatecontrolofspindefectsin4hsic AT andrewlyeats opticalchargestatecontrolofspindefectsin4hsic AT samueljwhiteley opticalchargestatecontrolofspindefectsin4hsic AT jensniklas opticalchargestatecontrolofspindefectsin4hsic AT oleggpoluektov opticalchargestatecontrolofspindefectsin4hsic AT fjosephheremans opticalchargestatecontrolofspindefectsin4hsic AT daviddawschalom opticalchargestatecontrolofspindefectsin4hsic |
_version_ |
1718382171838742528 |