Smart-cut-like laser slicing of GaN substrate using its own nitrogen

Abstract We have investigated the possibility of applying lasers to slice GaN substrates. Using a sub-nanosecond laser with a wavelength of 532 nm, we succeeded in slicing GaN substrates. In the laser slicing method used in this study, there was almost no kerf loss, and the thickness of the layer da...

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Autores principales:	Atsushi Tanaka, Ryuji Sugiura, Daisuke Kawaguchi, Toshiki Yui, Yotaro Wani, Tomomi Aratani, Hirotaka Watanabe, Hadi Sena, Yoshio Honda, Yasunori Igasaki, Hiroshi Amano
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/be43e2cf600043c59677c0630e8c6dd3
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spelling	oai:doaj.org-article:be43e2cf600043c59677c0630e8c6dd32021-12-02T14:58:48ZSmart-cut-like laser slicing of GaN substrate using its own nitrogen10.1038/s41598-021-97159-w2045-2322https://doaj.org/article/be43e2cf600043c59677c0630e8c6dd32021-09-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-97159-whttps://doaj.org/toc/2045-2322Abstract We have investigated the possibility of applying lasers to slice GaN substrates. Using a sub-nanosecond laser with a wavelength of 532 nm, we succeeded in slicing GaN substrates. In the laser slicing method used in this study, there was almost no kerf loss, and the thickness of the layer damaged by laser slicing was about 40 µm. We demonstrated that a standard high quality homoepitaxial layer can be grown on the sliced surface after removing the damaged layer by polishing.Atsushi TanakaRyuji SugiuraDaisuke KawaguchiToshiki YuiYotaro WaniTomomi ArataniHirotaka WatanabeHadi SenaYoshio HondaYasunori IgasakiHiroshi AmanoNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-8 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Atsushi Tanaka Ryuji Sugiura Daisuke Kawaguchi Toshiki Yui Yotaro Wani Tomomi Aratani Hirotaka Watanabe Hadi Sena Yoshio Honda Yasunori Igasaki Hiroshi Amano Smart-cut-like laser slicing of GaN substrate using its own nitrogen
description	Abstract We have investigated the possibility of applying lasers to slice GaN substrates. Using a sub-nanosecond laser with a wavelength of 532 nm, we succeeded in slicing GaN substrates. In the laser slicing method used in this study, there was almost no kerf loss, and the thickness of the layer damaged by laser slicing was about 40 µm. We demonstrated that a standard high quality homoepitaxial layer can be grown on the sliced surface after removing the damaged layer by polishing.
format	article
author	Atsushi Tanaka Ryuji Sugiura Daisuke Kawaguchi Toshiki Yui Yotaro Wani Tomomi Aratani Hirotaka Watanabe Hadi Sena Yoshio Honda Yasunori Igasaki Hiroshi Amano
author_facet	Atsushi Tanaka Ryuji Sugiura Daisuke Kawaguchi Toshiki Yui Yotaro Wani Tomomi Aratani Hirotaka Watanabe Hadi Sena Yoshio Honda Yasunori Igasaki Hiroshi Amano
author_sort	Atsushi Tanaka
title	Smart-cut-like laser slicing of GaN substrate using its own nitrogen
title_short	Smart-cut-like laser slicing of GaN substrate using its own nitrogen
title_full	Smart-cut-like laser slicing of GaN substrate using its own nitrogen
title_fullStr	Smart-cut-like laser slicing of GaN substrate using its own nitrogen
title_full_unstemmed	Smart-cut-like laser slicing of GaN substrate using its own nitrogen
title_sort	smart-cut-like laser slicing of gan substrate using its own nitrogen
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/be43e2cf600043c59677c0630e8c6dd3
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Smart-cut-like laser slicing of GaN substrate using its own nitrogen

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