Investigation of multilevel data storage in silicon-based polycrystalline ferroelectric tunnel junction

Abstract Multilevel data ferroelectric tunnel junction is a breakthrough for further improving the storage density of ferroelectric random access memories. However, the application of these ferroelectric tunnel junctions is limited by high cost of epitaxial perovskite heterostructures, unsatisfactor...

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Autores principales: Pengfei Hou, Jinbin Wang, Xiangli Zhong
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2017
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Acceso en línea:https://doaj.org/article/becbd3e827e346a49c91ad2e6dcdad24
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