Investigation of multilevel data storage in silicon-based polycrystalline ferroelectric tunnel junction

Abstract Multilevel data ferroelectric tunnel junction is a breakthrough for further improving the storage density of ferroelectric random access memories. However, the application of these ferroelectric tunnel junctions is limited by high cost of epitaxial perovskite heterostructures, unsatisfactor...

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Autores principales:	Pengfei Hou, Jinbin Wang, Xiangli Zhong
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/becbd3e827e346a49c91ad2e6dcdad24
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spelling	oai:doaj.org-article:becbd3e827e346a49c91ad2e6dcdad242021-12-02T16:06:21ZInvestigation of multilevel data storage in silicon-based polycrystalline ferroelectric tunnel junction10.1038/s41598-017-04825-z2045-2322https://doaj.org/article/becbd3e827e346a49c91ad2e6dcdad242017-07-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-04825-zhttps://doaj.org/toc/2045-2322Abstract Multilevel data ferroelectric tunnel junction is a breakthrough for further improving the storage density of ferroelectric random access memories. However, the application of these ferroelectric tunnel junctions is limited by high cost of epitaxial perovskite heterostructures, unsatisfactory retention and difficulty of exactly controlling the middle polarization states. In order to overcome the issues, we develop a ferroelectric tunnel junction with smooth ultrathin polycrystalline BiFeO3 (BFO) film. Through controlling the polarization state and oxygen vacancy migration using voltage pulses, we demonstrate that voltage-controlled barrier yields a memristive behavior in the device, in which the resistance variations exceed over two orders of magnitude. And we achieve multi logic states written and read easily using voltage pulses in the device. Especially the device is integrated with the silicon technology in modern microelectronics. Our results suggest new opportunity for ferroelectrics as high storage density nonvolatile memories.Pengfei HouJinbin WangXiangli ZhongNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-7 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Pengfei Hou Jinbin Wang Xiangli Zhong Investigation of multilevel data storage in silicon-based polycrystalline ferroelectric tunnel junction
description	Abstract Multilevel data ferroelectric tunnel junction is a breakthrough for further improving the storage density of ferroelectric random access memories. However, the application of these ferroelectric tunnel junctions is limited by high cost of epitaxial perovskite heterostructures, unsatisfactory retention and difficulty of exactly controlling the middle polarization states. In order to overcome the issues, we develop a ferroelectric tunnel junction with smooth ultrathin polycrystalline BiFeO3 (BFO) film. Through controlling the polarization state and oxygen vacancy migration using voltage pulses, we demonstrate that voltage-controlled barrier yields a memristive behavior in the device, in which the resistance variations exceed over two orders of magnitude. And we achieve multi logic states written and read easily using voltage pulses in the device. Especially the device is integrated with the silicon technology in modern microelectronics. Our results suggest new opportunity for ferroelectrics as high storage density nonvolatile memories.
format	article
author	Pengfei Hou Jinbin Wang Xiangli Zhong
author_facet	Pengfei Hou Jinbin Wang Xiangli Zhong
author_sort	Pengfei Hou
title	Investigation of multilevel data storage in silicon-based polycrystalline ferroelectric tunnel junction
title_short	Investigation of multilevel data storage in silicon-based polycrystalline ferroelectric tunnel junction
title_full	Investigation of multilevel data storage in silicon-based polycrystalline ferroelectric tunnel junction
title_fullStr	Investigation of multilevel data storage in silicon-based polycrystalline ferroelectric tunnel junction
title_full_unstemmed	Investigation of multilevel data storage in silicon-based polycrystalline ferroelectric tunnel junction
title_sort	investigation of multilevel data storage in silicon-based polycrystalline ferroelectric tunnel junction
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/becbd3e827e346a49c91ad2e6dcdad24
work_keys_str_mv	AT pengfeihou investigationofmultileveldatastorageinsiliconbasedpolycrystallineferroelectrictunneljunction AT jinbinwang investigationofmultileveldatastorageinsiliconbasedpolycrystallineferroelectrictunneljunction AT xianglizhong investigationofmultileveldatastorageinsiliconbasedpolycrystallineferroelectrictunneljunction
_version_	1718385050371751936

Investigation of multilevel data storage in silicon-based polycrystalline ferroelectric tunnel junction

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