Investigation of multilevel data storage in silicon-based polycrystalline ferroelectric tunnel junction
Abstract Multilevel data ferroelectric tunnel junction is a breakthrough for further improving the storage density of ferroelectric random access memories. However, the application of these ferroelectric tunnel junctions is limited by high cost of epitaxial perovskite heterostructures, unsatisfactor...
Saved in:
Main Authors: | Pengfei Hou, Jinbin Wang, Xiangli Zhong |
---|---|
Format: | article |
Language: | EN |
Published: |
Nature Portfolio
2017
|
Subjects: | |
Online Access: | https://doaj.org/article/becbd3e827e346a49c91ad2e6dcdad24 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Sub-nanosecond memristor based on ferroelectric tunnel junction
by: Chao Ma, et al.
Published: (2020) -
Giant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier
by: Zhongnan Xi, et al.
Published: (2017) -
Design Space Exploration of Ferroelectric Tunnel Junction Toward Crossbar Memories
by: Nicholas Jao, et al.
Published: (2021) -
Optically controlled electroresistance and electrically controlled photovoltage in ferroelectric tunnel junctions
by: Wei Jin Hu, et al.
Published: (2016) -
Quantum tunneling in magnetic tunneling junctions
by: Evgeni Cruz de Gracia, et al.
Published: (2012)