Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates

Abstract Selective Area van der Waals Epitaxy (SAVWE) of III-Nitride device has been proposed recently by our group as an enabling solution for h-BN-based device transfer. By using a patterned dielectric mask with openings slightly larger than device sizes, pick-and-place of discrete LEDs onto flexi...

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Autores principales:	Soufiane Karrakchou, Suresh Sundaram, Taha Ayari, Adama Mballo, Phuong Vuong, Ashutosh Srivastava, Rajat Gujrati, Ali Ahaitouf, Gilles Patriarche, Thierry Leichlé, Simon Gautier, Tarik Moudakir, Paul L. Voss, Jean Paul Salvestrini, Abdallah Ougazzaden
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2020
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/bfb51b0b6b3648d6979cc29208c00b7b
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spelling	oai:doaj.org-article:bfb51b0b6b3648d6979cc29208c00b7b2021-12-02T11:43:50ZEffectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates10.1038/s41598-020-77681-z2045-2322https://doaj.org/article/bfb51b0b6b3648d6979cc29208c00b7b2020-12-01T00:00:00Zhttps://doi.org/10.1038/s41598-020-77681-zhttps://doaj.org/toc/2045-2322Abstract Selective Area van der Waals Epitaxy (SAVWE) of III-Nitride device has been proposed recently by our group as an enabling solution for h-BN-based device transfer. By using a patterned dielectric mask with openings slightly larger than device sizes, pick-and-place of discrete LEDs onto flexible substrates was achieved. A more detailed study is needed to understand the effect of this selective area growth on material quality, device performance and device transfer. Here we present a study performed on two types of LEDs (those grown on h-BN on patterned and unpatterned sapphire) from the epitaxial growth to device performance and thermal dissipation measurements before and after transfer. Millimeter-size LEDs were transferred to aluminum tape and to silicon substrates by van der Waals liquid capillary bonding. It is shown that patterned samples lead to a better material quality as well as improved electrical and optical device performances. In addition, patterned structures allowed for a much better transfer yield to silicon substrates than unpatterned structures. We demonstrate that SAVWE, combined with either transfer processes to soft or rigid substrates, offers an efficient, robust and low-cost heterogenous integration capability of large-size devices to silicon for photonic and electronic applications.Soufiane KarrakchouSuresh SundaramTaha AyariAdama MballoPhuong VuongAshutosh SrivastavaRajat GujratiAli AhaitoufGilles PatriarcheThierry LeichléSimon GautierTarik MoudakirPaul L. VossJean Paul SalvestriniAbdallah OugazzadenNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 10, Iss 1, Pp 1-9 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Soufiane Karrakchou Suresh Sundaram Taha Ayari Adama Mballo Phuong Vuong Ashutosh Srivastava Rajat Gujrati Ali Ahaitouf Gilles Patriarche Thierry Leichlé Simon Gautier Tarik Moudakir Paul L. Voss Jean Paul Salvestrini Abdallah Ougazzaden Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates
description	Abstract Selective Area van der Waals Epitaxy (SAVWE) of III-Nitride device has been proposed recently by our group as an enabling solution for h-BN-based device transfer. By using a patterned dielectric mask with openings slightly larger than device sizes, pick-and-place of discrete LEDs onto flexible substrates was achieved. A more detailed study is needed to understand the effect of this selective area growth on material quality, device performance and device transfer. Here we present a study performed on two types of LEDs (those grown on h-BN on patterned and unpatterned sapphire) from the epitaxial growth to device performance and thermal dissipation measurements before and after transfer. Millimeter-size LEDs were transferred to aluminum tape and to silicon substrates by van der Waals liquid capillary bonding. It is shown that patterned samples lead to a better material quality as well as improved electrical and optical device performances. In addition, patterned structures allowed for a much better transfer yield to silicon substrates than unpatterned structures. We demonstrate that SAVWE, combined with either transfer processes to soft or rigid substrates, offers an efficient, robust and low-cost heterogenous integration capability of large-size devices to silicon for photonic and electronic applications.
format	article
author	Soufiane Karrakchou Suresh Sundaram Taha Ayari Adama Mballo Phuong Vuong Ashutosh Srivastava Rajat Gujrati Ali Ahaitouf Gilles Patriarche Thierry Leichlé Simon Gautier Tarik Moudakir Paul L. Voss Jean Paul Salvestrini Abdallah Ougazzaden
author_facet	Soufiane Karrakchou Suresh Sundaram Taha Ayari Adama Mballo Phuong Vuong Ashutosh Srivastava Rajat Gujrati Ali Ahaitouf Gilles Patriarche Thierry Leichlé Simon Gautier Tarik Moudakir Paul L. Voss Jean Paul Salvestrini Abdallah Ougazzaden
author_sort	Soufiane Karrakchou
title	Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates
title_short	Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates
title_full	Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates
title_fullStr	Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates
title_full_unstemmed	Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates
title_sort	effectiveness of selective area growth using van der waals h-bn layer for crack-free transfer of large-size iii-n devices onto arbitrary substrates
publisher	Nature Portfolio
publishDate	2020
url	https://doaj.org/article/bfb51b0b6b3648d6979cc29208c00b7b
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Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates

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