Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates

Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates

Abstract Selective Area van der Waals Epitaxy (SAVWE) of III-Nitride device has been proposed recently by our group as an enabling solution for h-BN-based device transfer. By using a patterned dielectric mask with openings slightly larger than device sizes, pick-and-place of discrete LEDs onto flexi...

Full description

Saved in:
Bibliographic Details
Main Authors: Soufiane Karrakchou, Suresh Sundaram, Taha Ayari, Adama Mballo, Phuong Vuong, Ashutosh Srivastava, Rajat Gujrati, Ali Ahaitouf, Gilles Patriarche, Thierry Leichlé, Simon Gautier, Tarik Moudakir, Paul L. Voss, Jean Paul Salvestrini, Abdallah Ougazzaden
Format: article
Language:EN
Published: Nature Portfolio 2020
Subjects:
Medicine
R
Science
Q
Online Access:https://doaj.org/article/bfb51b0b6b3648d6979cc29208c00b7b
Tags: Add Tag
No Tags, Be the first to tag this record!

Internet

https://doaj.org/article/bfb51b0b6b3648d6979cc29208c00b7b

Similar Items