Unconventional metal-insulator transition in RexSi1-x

Unconventional metal-insulator transition in RexSi1-x

Low-temperature resistivity of the amorphous RexSi1-x thin films at x

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Autores principales: Aruşanov, Ernest, Lisunov, Constantin, Schumann, J, Vinzellberg, H
Formato: article
Lenguaje:EN
Publicado: D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2010
Materias:
Physics
QC1-999
Electronics
TK7800-8360
Acceso en línea:https://doaj.org/article/bfe5aedb60604945b97b6d324b0c73d9
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spelling oai:doaj.org-article:bfe5aedb60604945b97b6d324b0c73d92021-11-21T12:03:09ZUnconventional metal-insulator transition in RexSi1-x2537-63651810-648Xhttps://doaj.org/article/bfe5aedb60604945b97b6d324b0c73d92010-12-01T00:00:00Zhttps://mjps.nanotech.md/archive/2010/article/4235https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365Low-temperature resistivity of the amorphous RexSi1-x thin films at x Aruşanov, ErnestLisunov, ConstantinSchumann, JVinzellberg, HD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 9, Iss 3-4, Pp 252-256 (2010)
institution DOAJ
collection DOAJ
language EN
topic Physics
QC1-999
Electronics
TK7800-8360
spellingShingle Physics
QC1-999
Electronics
TK7800-8360
Aruşanov, Ernest
Lisunov, Constantin
Schumann, J
Vinzellberg, H
Unconventional metal-insulator transition in RexSi1-x
description Low-temperature resistivity of the amorphous RexSi1-x thin films at x
format article
author Aruşanov, Ernest
Lisunov, Constantin
Schumann, J
Vinzellberg, H
author_facet Aruşanov, Ernest
Lisunov, Constantin
Schumann, J
Vinzellberg, H
author_sort Aruşanov, Ernest
title Unconventional metal-insulator transition in RexSi1-x
title_short Unconventional metal-insulator transition in RexSi1-x
title_full Unconventional metal-insulator transition in RexSi1-x
title_fullStr Unconventional metal-insulator transition in RexSi1-x
title_full_unstemmed Unconventional metal-insulator transition in RexSi1-x
title_sort unconventional metal-insulator transition in rexsi1-x
publisher D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate 2010
url https://doaj.org/article/bfe5aedb60604945b97b6d324b0c73d9
work_keys_str_mv AT arusanovernest unconventionalmetalinsulatortransitioninrexsi1x
AT lisunovconstantin unconventionalmetalinsulatortransitioninrexsi1x
AT schumannj unconventionalmetalinsulatortransitioninrexsi1x
AT vinzellbergh unconventionalmetalinsulatortransitioninrexsi1x
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