Spatial defects nanoengineering for bipolar conductivity in MoS2

Spatial defects nanoengineering for bipolar conductivity in MoS2

Bipolar conductivity is fundamental for electronic devices based on two-dimensional semiconductors. Here, the authors report on-demand p- and n-doping of monolayer MoS2 via defects engineering using thermochemical scanning probe lithography, and achieve a p-n junction with rectification ratio over 1...

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Autores principales: Xiaorui Zheng, Annalisa Calò, Tengfei Cao, Xiangyu Liu, Zhujun Huang, Paul Masih Das, Marija Drndic, Edoardo Albisetti, Francesco Lavini, Tai-De Li, Vishal Narang, William P. King, John W. Harrold, Michele Vittadello, Carmela Aruta, Davood Shahrjerdi, Elisa Riedo
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2020
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Acceso en línea:https://doaj.org/article/c1890b88c496406cb45c04f8c5ba36bd
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https://doaj.org/article/c1890b88c496406cb45c04f8c5ba36bd

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