Spatial defects nanoengineering for bipolar conductivity in MoS2

Bipolar conductivity is fundamental for electronic devices based on two-dimensional semiconductors. Here, the authors report on-demand p- and n-doping of monolayer MoS2 via defects engineering using thermochemical scanning probe lithography, and achieve a p-n junction with rectification ratio over 1...

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Autores principales:	Xiaorui Zheng, Annalisa Calò, Tengfei Cao, Xiangyu Liu, Zhujun Huang, Paul Masih Das, Marija Drndic, Edoardo Albisetti, Francesco Lavini, Tai-De Li, Vishal Narang, William P. King, John W. Harrold, Michele Vittadello, Carmela Aruta, Davood Shahrjerdi, Elisa Riedo
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2020
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/c1890b88c496406cb45c04f8c5ba36bd
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spelling	oai:doaj.org-article:c1890b88c496406cb45c04f8c5ba36bd2021-12-02T18:34:15ZSpatial defects nanoengineering for bipolar conductivity in MoS210.1038/s41467-020-17241-12041-1723https://doaj.org/article/c1890b88c496406cb45c04f8c5ba36bd2020-07-01T00:00:00Zhttps://doi.org/10.1038/s41467-020-17241-1https://doaj.org/toc/2041-1723Bipolar conductivity is fundamental for electronic devices based on two-dimensional semiconductors. Here, the authors report on-demand p- and n-doping of monolayer MoS2 via defects engineering using thermochemical scanning probe lithography, and achieve a p-n junction with rectification ratio over 104.Xiaorui ZhengAnnalisa CalòTengfei CaoXiangyu LiuZhujun HuangPaul Masih DasMarija DrndicEdoardo AlbisettiFrancesco LaviniTai-De LiVishal NarangWilliam P. KingJohn W. HarroldMichele VittadelloCarmela ArutaDavood ShahrjerdiElisa RiedoNature PortfolioarticleScienceQENNature Communications, Vol 11, Iss 1, Pp 1-12 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Xiaorui Zheng Annalisa Calò Tengfei Cao Xiangyu Liu Zhujun Huang Paul Masih Das Marija Drndic Edoardo Albisetti Francesco Lavini Tai-De Li Vishal Narang William P. King John W. Harrold Michele Vittadello Carmela Aruta Davood Shahrjerdi Elisa Riedo Spatial defects nanoengineering for bipolar conductivity in MoS2
description	Bipolar conductivity is fundamental for electronic devices based on two-dimensional semiconductors. Here, the authors report on-demand p- and n-doping of monolayer MoS2 via defects engineering using thermochemical scanning probe lithography, and achieve a p-n junction with rectification ratio over 104.
format	article
author	Xiaorui Zheng Annalisa Calò Tengfei Cao Xiangyu Liu Zhujun Huang Paul Masih Das Marija Drndic Edoardo Albisetti Francesco Lavini Tai-De Li Vishal Narang William P. King John W. Harrold Michele Vittadello Carmela Aruta Davood Shahrjerdi Elisa Riedo
author_facet	Xiaorui Zheng Annalisa Calò Tengfei Cao Xiangyu Liu Zhujun Huang Paul Masih Das Marija Drndic Edoardo Albisetti Francesco Lavini Tai-De Li Vishal Narang William P. King John W. Harrold Michele Vittadello Carmela Aruta Davood Shahrjerdi Elisa Riedo
author_sort	Xiaorui Zheng
title	Spatial defects nanoengineering for bipolar conductivity in MoS2
title_short	Spatial defects nanoengineering for bipolar conductivity in MoS2
title_full	Spatial defects nanoengineering for bipolar conductivity in MoS2
title_fullStr	Spatial defects nanoengineering for bipolar conductivity in MoS2
title_full_unstemmed	Spatial defects nanoengineering for bipolar conductivity in MoS2
title_sort	spatial defects nanoengineering for bipolar conductivity in mos2
publisher	Nature Portfolio
publishDate	2020
url	https://doaj.org/article/c1890b88c496406cb45c04f8c5ba36bd
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Spatial defects nanoengineering for bipolar conductivity in MoS2

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