Nonvolatile ferroelectric field-effect transistors
There is growing interest in non-traditional materials for logic applications. Here, the authors demonstrate a domain device architecture based on ferroelectric LiNbO3 crystals with gate voltage controlled transistor without subthreshold swing and source voltage controlled nonvolatile transistor.
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| Autores principales: | , , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2020
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/c1f28b0a502a411793c0752618c58460 |
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