Nonvolatile ferroelectric field-effect transistors

There is growing interest in non-traditional materials for logic applications. Here, the authors demonstrate a domain device architecture based on ferroelectric LiNbO3 crystals with gate voltage controlled transistor without subthreshold swing and source voltage controlled nonvolatile transistor.

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Autores principales:	Xiaojie Chai, Jun Jiang, Qinghua Zhang, Xu Hou, Fanqi Meng, Jie Wang, Lin Gu, David Wei Zhang, An Quan Jiang
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2020
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/c1f28b0a502a411793c0752618c58460
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spelling	oai:doaj.org-article:c1f28b0a502a411793c0752618c584602021-12-02T15:57:19ZNonvolatile ferroelectric field-effect transistors10.1038/s41467-020-16623-92041-1723https://doaj.org/article/c1f28b0a502a411793c0752618c584602020-06-01T00:00:00Zhttps://doi.org/10.1038/s41467-020-16623-9https://doaj.org/toc/2041-1723There is growing interest in non-traditional materials for logic applications. Here, the authors demonstrate a domain device architecture based on ferroelectric LiNbO3 crystals with gate voltage controlled transistor without subthreshold swing and source voltage controlled nonvolatile transistor.Xiaojie ChaiJun JiangQinghua ZhangXu HouFanqi MengJie WangLin GuDavid Wei ZhangAn Quan JiangNature PortfolioarticleScienceQENNature Communications, Vol 11, Iss 1, Pp 1-9 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Xiaojie Chai Jun Jiang Qinghua Zhang Xu Hou Fanqi Meng Jie Wang Lin Gu David Wei Zhang An Quan Jiang Nonvolatile ferroelectric field-effect transistors
description	There is growing interest in non-traditional materials for logic applications. Here, the authors demonstrate a domain device architecture based on ferroelectric LiNbO3 crystals with gate voltage controlled transistor without subthreshold swing and source voltage controlled nonvolatile transistor.
format	article
author	Xiaojie Chai Jun Jiang Qinghua Zhang Xu Hou Fanqi Meng Jie Wang Lin Gu David Wei Zhang An Quan Jiang
author_facet	Xiaojie Chai Jun Jiang Qinghua Zhang Xu Hou Fanqi Meng Jie Wang Lin Gu David Wei Zhang An Quan Jiang
author_sort	Xiaojie Chai
title	Nonvolatile ferroelectric field-effect transistors
title_short	Nonvolatile ferroelectric field-effect transistors
title_full	Nonvolatile ferroelectric field-effect transistors
title_fullStr	Nonvolatile ferroelectric field-effect transistors
title_full_unstemmed	Nonvolatile ferroelectric field-effect transistors
title_sort	nonvolatile ferroelectric field-effect transistors
publisher	Nature Portfolio
publishDate	2020
url	https://doaj.org/article/c1f28b0a502a411793c0752618c58460
work_keys_str_mv	AT xiaojiechai nonvolatileferroelectricfieldeffecttransistors AT junjiang nonvolatileferroelectricfieldeffecttransistors AT qinghuazhang nonvolatileferroelectricfieldeffecttransistors AT xuhou nonvolatileferroelectricfieldeffecttransistors AT fanqimeng nonvolatileferroelectricfieldeffecttransistors AT jiewang nonvolatileferroelectricfieldeffecttransistors AT lingu nonvolatileferroelectricfieldeffecttransistors AT davidweizhang nonvolatileferroelectricfieldeffecttransistors AT anquanjiang nonvolatileferroelectricfieldeffecttransistors
_version_	1718385354322477056

Nonvolatile ferroelectric field-effect transistors

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