Nonvolatile ferroelectric field-effect transistors

Nonvolatile ferroelectric field-effect transistors

There is growing interest in non-traditional materials for logic applications. Here, the authors demonstrate a domain device architecture based on ferroelectric LiNbO3 crystals with gate voltage controlled transistor without subthreshold swing and source voltage controlled nonvolatile transistor.

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Autores principales: Xiaojie Chai, Jun Jiang, Qinghua Zhang, Xu Hou, Fanqi Meng, Jie Wang, Lin Gu, David Wei Zhang, An Quan Jiang
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2020
Materias:
Science
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Acceso en línea:https://doaj.org/article/c1f28b0a502a411793c0752618c58460
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