Realization of wafer-scale nanogratings with sub-50 nm period through vacancy epitaxy

Fabrication of wafer-scale nanogratings for X-ray spectroscopy is difficult especially for very high line densities. The authors use vacancy epitaxy to fabricate sub-50-nm-periodicity gratings, coated with multilayers for efficient operation, for use in ultra-high resolution x-ray spectroscopy.

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Autores principales: Qiushi Huang, Qi jia, Jiangtao Feng, Hao Huang, Xiaowei Yang, Joerg Grenzer, Kai Huang, Shibing Zhang, Jiajie Lin, Hongyan Zhou, Tiangui You, Wenjie Yu, Stefan Facsko, Philippe Jonnard, Meiyi Wu, Angelo Giglia, Zhong Zhang, Zhi Liu, Zhanshan Wang, Xi Wang, Xin Ou
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Lenguaje:EN
Publicado: Nature Portfolio 2019
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Acceso en línea:https://doaj.org/article/c20da6ae27a34cc888da2e6b0ffc3180
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spelling oai:doaj.org-article:c20da6ae27a34cc888da2e6b0ffc31802021-12-02T15:36:19ZRealization of wafer-scale nanogratings with sub-50 nm period through vacancy epitaxy10.1038/s41467-019-10095-22041-1723https://doaj.org/article/c20da6ae27a34cc888da2e6b0ffc31802019-06-01T00:00:00Zhttps://doi.org/10.1038/s41467-019-10095-2https://doaj.org/toc/2041-1723Fabrication of wafer-scale nanogratings for X-ray spectroscopy is difficult especially for very high line densities. The authors use vacancy epitaxy to fabricate sub-50-nm-periodicity gratings, coated with multilayers for efficient operation, for use in ultra-high resolution x-ray spectroscopy.Qiushi HuangQi jiaJiangtao FengHao HuangXiaowei YangJoerg GrenzerKai HuangShibing ZhangJiajie LinHongyan ZhouTiangui YouWenjie YuStefan FacskoPhilippe JonnardMeiyi WuAngelo GigliaZhong ZhangZhi LiuZhanshan WangXi WangXin OuNature PortfolioarticleScienceQENNature Communications, Vol 10, Iss 1, Pp 1-9 (2019)
institution DOAJ
collection DOAJ
language EN
topic Science
Q
spellingShingle Science
Q
Qiushi Huang
Qi jia
Jiangtao Feng
Hao Huang
Xiaowei Yang
Joerg Grenzer
Kai Huang
Shibing Zhang
Jiajie Lin
Hongyan Zhou
Tiangui You
Wenjie Yu
Stefan Facsko
Philippe Jonnard
Meiyi Wu
Angelo Giglia
Zhong Zhang
Zhi Liu
Zhanshan Wang
Xi Wang
Xin Ou
Realization of wafer-scale nanogratings with sub-50 nm period through vacancy epitaxy
description Fabrication of wafer-scale nanogratings for X-ray spectroscopy is difficult especially for very high line densities. The authors use vacancy epitaxy to fabricate sub-50-nm-periodicity gratings, coated with multilayers for efficient operation, for use in ultra-high resolution x-ray spectroscopy.
format article
author Qiushi Huang
Qi jia
Jiangtao Feng
Hao Huang
Xiaowei Yang
Joerg Grenzer
Kai Huang
Shibing Zhang
Jiajie Lin
Hongyan Zhou
Tiangui You
Wenjie Yu
Stefan Facsko
Philippe Jonnard
Meiyi Wu
Angelo Giglia
Zhong Zhang
Zhi Liu
Zhanshan Wang
Xi Wang
Xin Ou
author_facet Qiushi Huang
Qi jia
Jiangtao Feng
Hao Huang
Xiaowei Yang
Joerg Grenzer
Kai Huang
Shibing Zhang
Jiajie Lin
Hongyan Zhou
Tiangui You
Wenjie Yu
Stefan Facsko
Philippe Jonnard
Meiyi Wu
Angelo Giglia
Zhong Zhang
Zhi Liu
Zhanshan Wang
Xi Wang
Xin Ou
author_sort Qiushi Huang
title Realization of wafer-scale nanogratings with sub-50 nm period through vacancy epitaxy
title_short Realization of wafer-scale nanogratings with sub-50 nm period through vacancy epitaxy
title_full Realization of wafer-scale nanogratings with sub-50 nm period through vacancy epitaxy
title_fullStr Realization of wafer-scale nanogratings with sub-50 nm period through vacancy epitaxy
title_full_unstemmed Realization of wafer-scale nanogratings with sub-50 nm period through vacancy epitaxy
title_sort realization of wafer-scale nanogratings with sub-50 nm period through vacancy epitaxy
publisher Nature Portfolio
publishDate 2019
url https://doaj.org/article/c20da6ae27a34cc888da2e6b0ffc3180
work_keys_str_mv AT qiushihuang realizationofwaferscalenanogratingswithsub50nmperiodthroughvacancyepitaxy
AT qijia realizationofwaferscalenanogratingswithsub50nmperiodthroughvacancyepitaxy
AT jiangtaofeng realizationofwaferscalenanogratingswithsub50nmperiodthroughvacancyepitaxy
AT haohuang realizationofwaferscalenanogratingswithsub50nmperiodthroughvacancyepitaxy
AT xiaoweiyang realizationofwaferscalenanogratingswithsub50nmperiodthroughvacancyepitaxy
AT joerggrenzer realizationofwaferscalenanogratingswithsub50nmperiodthroughvacancyepitaxy
AT kaihuang realizationofwaferscalenanogratingswithsub50nmperiodthroughvacancyepitaxy
AT shibingzhang realizationofwaferscalenanogratingswithsub50nmperiodthroughvacancyepitaxy
AT jiajielin realizationofwaferscalenanogratingswithsub50nmperiodthroughvacancyepitaxy
AT hongyanzhou realizationofwaferscalenanogratingswithsub50nmperiodthroughvacancyepitaxy
AT tianguiyou realizationofwaferscalenanogratingswithsub50nmperiodthroughvacancyepitaxy
AT wenjieyu realizationofwaferscalenanogratingswithsub50nmperiodthroughvacancyepitaxy
AT stefanfacsko realizationofwaferscalenanogratingswithsub50nmperiodthroughvacancyepitaxy
AT philippejonnard realizationofwaferscalenanogratingswithsub50nmperiodthroughvacancyepitaxy
AT meiyiwu realizationofwaferscalenanogratingswithsub50nmperiodthroughvacancyepitaxy
AT angelogiglia realizationofwaferscalenanogratingswithsub50nmperiodthroughvacancyepitaxy
AT zhongzhang realizationofwaferscalenanogratingswithsub50nmperiodthroughvacancyepitaxy
AT zhiliu realizationofwaferscalenanogratingswithsub50nmperiodthroughvacancyepitaxy
AT zhanshanwang realizationofwaferscalenanogratingswithsub50nmperiodthroughvacancyepitaxy
AT xiwang realizationofwaferscalenanogratingswithsub50nmperiodthroughvacancyepitaxy
AT xinou realizationofwaferscalenanogratingswithsub50nmperiodthroughvacancyepitaxy
_version_ 1718386315551047680