Optimization of Sacrificial Layer Etching in Single-Crystal Silicon Nano-Films Transfer Printing for Heterogeneous Integration Application

As one of the important technologies in the field of heterogeneous integration, transfer technology has broad application prospects and unique technical advantages. This transfer technology includes the wet chemical etching of a sacrificial layer, such that silicon nano-film devices are released fro...

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Autores principales:	Jiaqi Zhang, Yichang Wu, Guofang Yang, Dazheng Chen, Jincheng Zhang, Hailong You, Chunfu Zhang, Yue Hao
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	single-crystal silicon nano-films transfer printing heterogeneous integration sacrificial layer Si MOSFET Chemistry QD1-999
Acceso en línea:	https://doaj.org/article/c2ec41e774a345a082d9ad9b978a319a
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spelling	oai:doaj.org-article:c2ec41e774a345a082d9ad9b978a319a2021-11-25T18:32:19ZOptimization of Sacrificial Layer Etching in Single-Crystal Silicon Nano-Films Transfer Printing for Heterogeneous Integration Application10.3390/nano111130852079-4991https://doaj.org/article/c2ec41e774a345a082d9ad9b978a319a2021-11-01T00:00:00Zhttps://www.mdpi.com/2079-4991/11/11/3085https://doaj.org/toc/2079-4991As one of the important technologies in the field of heterogeneous integration, transfer technology has broad application prospects and unique technical advantages. This transfer technology includes the wet chemical etching of a sacrificial layer, such that silicon nano-film devices are released from the donor substrate and can be transferred. However, in the process of wet etching the SiO<sub>2</sub> sacrificial layer present underneath the single-crystal silicon nano-film by using the transfer technology, the etching is often incomplete, which seriously affects the efficiency and quality of the transfer and makes the device preparation impossible. This article analyzes the principle of incomplete etching, and compares the four factors that affect the etching process, including the size of Si nano-film on top of the sacrificial layer, the location of the anchor point, the shape of Si nano-film on top of the sacrificial layer, and the thickness of the sacrificial layer. Finally, the etching conditions are obtained to avoid the phenomenon of incomplete etching of the sacrificial layer, so that the transfer technology can be better applied in the field of heterogeneous integration. Additionally, Si MOSFETs (Metal-Oxide-Semiconductor Field Effect Transistors) on sapphire substrate were fabricated by using the optimized transfer technology.Jiaqi ZhangYichang WuGuofang YangDazheng ChenJincheng ZhangHailong YouChunfu ZhangYue HaoMDPI AGarticlesingle-crystal silicon nano-filmstransfer printingheterogeneous integrationsacrificial layerSi MOSFETChemistryQD1-999ENNanomaterials, Vol 11, Iss 3085, p 3085 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	single-crystal silicon nano-films transfer printing heterogeneous integration sacrificial layer Si MOSFET Chemistry QD1-999
spellingShingle	single-crystal silicon nano-films transfer printing heterogeneous integration sacrificial layer Si MOSFET Chemistry QD1-999 Jiaqi Zhang Yichang Wu Guofang Yang Dazheng Chen Jincheng Zhang Hailong You Chunfu Zhang Yue Hao Optimization of Sacrificial Layer Etching in Single-Crystal Silicon Nano-Films Transfer Printing for Heterogeneous Integration Application
description	As one of the important technologies in the field of heterogeneous integration, transfer technology has broad application prospects and unique technical advantages. This transfer technology includes the wet chemical etching of a sacrificial layer, such that silicon nano-film devices are released from the donor substrate and can be transferred. However, in the process of wet etching the SiO<sub>2</sub> sacrificial layer present underneath the single-crystal silicon nano-film by using the transfer technology, the etching is often incomplete, which seriously affects the efficiency and quality of the transfer and makes the device preparation impossible. This article analyzes the principle of incomplete etching, and compares the four factors that affect the etching process, including the size of Si nano-film on top of the sacrificial layer, the location of the anchor point, the shape of Si nano-film on top of the sacrificial layer, and the thickness of the sacrificial layer. Finally, the etching conditions are obtained to avoid the phenomenon of incomplete etching of the sacrificial layer, so that the transfer technology can be better applied in the field of heterogeneous integration. Additionally, Si MOSFETs (Metal-Oxide-Semiconductor Field Effect Transistors) on sapphire substrate were fabricated by using the optimized transfer technology.
format	article
author	Jiaqi Zhang Yichang Wu Guofang Yang Dazheng Chen Jincheng Zhang Hailong You Chunfu Zhang Yue Hao
author_facet	Jiaqi Zhang Yichang Wu Guofang Yang Dazheng Chen Jincheng Zhang Hailong You Chunfu Zhang Yue Hao
author_sort	Jiaqi Zhang
title	Optimization of Sacrificial Layer Etching in Single-Crystal Silicon Nano-Films Transfer Printing for Heterogeneous Integration Application
title_short	Optimization of Sacrificial Layer Etching in Single-Crystal Silicon Nano-Films Transfer Printing for Heterogeneous Integration Application
title_full	Optimization of Sacrificial Layer Etching in Single-Crystal Silicon Nano-Films Transfer Printing for Heterogeneous Integration Application
title_fullStr	Optimization of Sacrificial Layer Etching in Single-Crystal Silicon Nano-Films Transfer Printing for Heterogeneous Integration Application
title_full_unstemmed	Optimization of Sacrificial Layer Etching in Single-Crystal Silicon Nano-Films Transfer Printing for Heterogeneous Integration Application
title_sort	optimization of sacrificial layer etching in single-crystal silicon nano-films transfer printing for heterogeneous integration application
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/c2ec41e774a345a082d9ad9b978a319a
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Optimization of Sacrificial Layer Etching in Single-Crystal Silicon Nano-Films Transfer Printing for Heterogeneous Integration Application

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