Lateral <inline-formula> <tex-math notation="LaTeX">$\beta$ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode on Sapphire Substrate With Reverse Blocking Voltage of 1.7 kV

Lateral <inline-formula> <tex-math notation="LaTeX">$\beta$ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode on Sapphire Substrate With Reverse Blocking Voltage of 1.7 kV

In this paper, we report on achieving the first high performance lateral <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub> Schottky barrier diode (SBD) on sapphire substrate via tran...

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Detalles Bibliográficos
Autores principales: Zhuangzhuang Hu, Hong Zhou, Kui Dang, Yuncong Cai, Zhaoqing Feng, Yangyang Gao, Qian Feng, Jincheng Zhang, Yue Hao
Formato: article
Lenguaje:EN
Publicado: IEEE 2018
Materias:
β-Ga₂O₃ nano-membrane
Sapphire substrate
lateral Schottky barrier diode
breakdown
Electrical engineering. Electronics. Nuclear engineering
TK1-9971
Acceso en línea:https://doaj.org/article/c3652f9b187748fcbc13a296267a3305
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https://doaj.org/article/c3652f9b187748fcbc13a296267a3305

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