Lateral <inline-formula> <tex-math notation="LaTeX">$\beta$ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode on Sapphire Substrate With Reverse Blocking Voltage of 1.7 kV
In this paper, we report on achieving the first high performance lateral <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub> Schottky barrier diode (SBD) on sapphire substrate via tran...
Guardado en:
| Autores principales: | , , , , , , , , |
|---|---|
| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
IEEE
2018
|
| Materias: | |
| Acceso en línea: | https://doaj.org/article/c3652f9b187748fcbc13a296267a3305 |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
| Sumario: | In this paper, we report on achieving the first high performance lateral <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub> Schottky barrier diode (SBD) on sapphire substrate via transferring <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub> nano-membrane channel from a low dislocation density bulk <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub> substrate. Non field-plated lateral SBDs with Schottky–Ohmic contact distance of 4, 6, 11, and <inline-formula> <tex-math notation="LaTeX">$15 \mu$ </tex-math></inline-formula>m demonstrate a reverse breakdown voltage (BV) of 0.64, 0.85, 1.2, and 1.7 kV with on resistance (<inline-formula> <tex-math notation="LaTeX">$R_\text {on}$ </tex-math></inline-formula>) of 47, 66, 91, and 190 <inline-formula> <tex-math notation="LaTeX">$\omega \cdot $ </tex-math></inline-formula>mm, respectively. This lateral <inline-formula> <tex-math notation="LaTeX">$R_{\text {on}, \text{sp}}$ </tex-math></inline-formula> ~ BV performance is comparable to that of vertical SBDs. Combining with 10<sup>7</sup> ~ 10<sup>8</sup> high temperature current on/off ratio, <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub> SBD shows its great promise for power rectifying once the <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub> drift layer epitaxial growth becomes more mature. |
|---|