$Lateral <inline-formula> <tex-math notation="LaTeX">$\beta$ </tex-math></inline-formula>-Ga2O3 Schottky Barrier Diode on Sapphire Substrate With Reverse Blocking Voltage of 1.7 kV$
Código QR

Lateral <inline-formula> <tex-math notation="LaTeX">$\beta$ </tex-math></inline-formula>-Ga2O3 Schottky Barrier Diode on Sapphire Substrate With Reverse Blocking Voltage of 1.7 kV

In this paper, we report on achieving the first high performance lateral <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula>-Ga2O3 Schottky barrier diode (SBD) on sapphire substrate via tran...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	Zhuangzhuang Hu, Hong Zhou, Kui Dang, Yuncong Cai, Zhaoqing Feng, Yangyang Gao, Qian Feng, Jincheng Zhang, Yue Hao
Formato:	article
Lenguaje:	EN
Publicado:	IEEE 2018
Materias:	β-Ga₂O₃ nano-membrane Sapphire substrate lateral Schottky barrier diode breakdown Electrical engineering. Electronics. Nuclear engineering TK1-9971
Acceso en línea:	https://doaj.org/article/c3652f9b187748fcbc13a296267a3305
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:c3652f9b187748fcbc13a296267a3305
record_format	dspace
spelling	oai:doaj.org-article:c3652f9b187748fcbc13a296267a33052021-11-19T00:00:41ZLateral <inline-formula> <tex-math notation="LaTeX">$\beta$ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode on Sapphire Substrate With Reverse Blocking Voltage of 1.7 kV2168-673410.1109/JEDS.2018.2853615https://doaj.org/article/c3652f9b187748fcbc13a296267a33052018-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/8410905/https://doaj.org/toc/2168-6734In this paper, we report on achieving the first high performance lateral <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub> Schottky barrier diode (SBD) on sapphire substrate via transferring <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub> nano-membrane channel from a low dislocation density bulk <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub> substrate. Non field-plated lateral SBDs with Schottky–Ohmic contact distance of 4, 6, 11, and <inline-formula> <tex-math notation="LaTeX">$15 \mu$ </tex-math></inline-formula>m demonstrate a reverse breakdown voltage (BV) of 0.64, 0.85, 1.2, and 1.7 kV with on resistance (<inline-formula> <tex-math notation="LaTeX">$R_\text {on}$ </tex-math></inline-formula>) of 47, 66, 91, and 190 <inline-formula> <tex-math notation="LaTeX">$\omega \cdot $ </tex-math></inline-formula>mm, respectively. This lateral <inline-formula> <tex-math notation="LaTeX">$R_{\text {on}, \text{sp}}$ </tex-math></inline-formula> ~ BV performance is comparable to that of vertical SBDs. Combining with 10<sup>7</sup> ~ 10<sup>8</sup> high temperature current on/off ratio, <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub> SBD shows its great promise for power rectifying once the <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub> drift layer epitaxial growth becomes more mature.Zhuangzhuang HuHong ZhouKui DangYuncong CaiZhaoqing FengYangyang GaoQian FengJincheng ZhangYue HaoIEEEarticleβ-Ga₂O₃ nano-membraneSapphire substratelateral Schottky barrier diodebreakdownElectrical engineering. Electronics. Nuclear engineeringTK1-9971ENIEEE Journal of the Electron Devices Society, Vol 6, Pp 815-820 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	β-Ga₂O₃ nano-membrane Sapphire substrate lateral Schottky barrier diode breakdown Electrical engineering. Electronics. Nuclear engineering TK1-9971
spellingShingle	β-Ga₂O₃ nano-membrane Sapphire substrate lateral Schottky barrier diode breakdown Electrical engineering. Electronics. Nuclear engineering TK1-9971 Zhuangzhuang Hu Hong Zhou Kui Dang Yuncong Cai Zhaoqing Feng Yangyang Gao Qian Feng Jincheng Zhang Yue Hao Lateral <inline-formula> <tex-math notation="LaTeX">$\beta$ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode on Sapphire Substrate With Reverse Blocking Voltage of 1.7 kV
description	In this paper, we report on achieving the first high performance lateral <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub> Schottky barrier diode (SBD) on sapphire substrate via transferring <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub> nano-membrane channel from a low dislocation density bulk <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub> substrate. Non field-plated lateral SBDs with Schottky–Ohmic contact distance of 4, 6, 11, and <inline-formula> <tex-math notation="LaTeX">$15 \mu$ </tex-math></inline-formula>m demonstrate a reverse breakdown voltage (BV) of 0.64, 0.85, 1.2, and 1.7 kV with on resistance (<inline-formula> <tex-math notation="LaTeX">$R_\text {on}$ </tex-math></inline-formula>) of 47, 66, 91, and 190 <inline-formula> <tex-math notation="LaTeX">$\omega \cdot $ </tex-math></inline-formula>mm, respectively. This lateral <inline-formula> <tex-math notation="LaTeX">$R_{\text {on}, \text{sp}}$ </tex-math></inline-formula> ~ BV performance is comparable to that of vertical SBDs. Combining with 10<sup>7</sup> ~ 10<sup>8</sup> high temperature current on/off ratio, <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub> SBD shows its great promise for power rectifying once the <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub> drift layer epitaxial growth becomes more mature.
format	article
author	Zhuangzhuang Hu Hong Zhou Kui Dang Yuncong Cai Zhaoqing Feng Yangyang Gao Qian Feng Jincheng Zhang Yue Hao
author_facet	Zhuangzhuang Hu Hong Zhou Kui Dang Yuncong Cai Zhaoqing Feng Yangyang Gao Qian Feng Jincheng Zhang Yue Hao
author_sort	Zhuangzhuang Hu
title	Lateral <inline-formula> <tex-math notation="LaTeX">$\beta$ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode on Sapphire Substrate With Reverse Blocking Voltage of 1.7 kV
title_short	Lateral <inline-formula> <tex-math notation="LaTeX">$\beta$ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode on Sapphire Substrate With Reverse Blocking Voltage of 1.7 kV
title_full	Lateral <inline-formula> <tex-math notation="LaTeX">$\beta$ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode on Sapphire Substrate With Reverse Blocking Voltage of 1.7 kV
title_fullStr	Lateral <inline-formula> <tex-math notation="LaTeX">$\beta$ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode on Sapphire Substrate With Reverse Blocking Voltage of 1.7 kV
title_full_unstemmed	Lateral <inline-formula> <tex-math notation="LaTeX">$\beta$ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode on Sapphire Substrate With Reverse Blocking Voltage of 1.7 kV
title_sort	lateral <inline-formula> <tex-math notation="latex">$\beta$ </tex-math></inline-formula>-ga<sub>2</sub>o<sub>3</sub> schottky barrier diode on sapphire substrate with reverse blocking voltage of 1.7 kv
publisher	IEEE
publishDate	2018
url	https://doaj.org/article/c3652f9b187748fcbc13a296267a3305
work_keys_str_mv	AT zhuangzhuanghu lateralinlineformulatexmathnotationlatexbetatexmathinlineformulagasub2subosub3subschottkybarrierdiodeonsapphiresubstratewithreverseblockingvoltageof17kv AT hongzhou lateralinlineformulatexmathnotationlatexbetatexmathinlineformulagasub2subosub3subschottkybarrierdiodeonsapphiresubstratewithreverseblockingvoltageof17kv AT kuidang lateralinlineformulatexmathnotationlatexbetatexmathinlineformulagasub2subosub3subschottkybarrierdiodeonsapphiresubstratewithreverseblockingvoltageof17kv AT yuncongcai lateralinlineformulatexmathnotationlatexbetatexmathinlineformulagasub2subosub3subschottkybarrierdiodeonsapphiresubstratewithreverseblockingvoltageof17kv AT zhaoqingfeng lateralinlineformulatexmathnotationlatexbetatexmathinlineformulagasub2subosub3subschottkybarrierdiodeonsapphiresubstratewithreverseblockingvoltageof17kv AT yangyanggao lateralinlineformulatexmathnotationlatexbetatexmathinlineformulagasub2subosub3subschottkybarrierdiodeonsapphiresubstratewithreverseblockingvoltageof17kv AT qianfeng lateralinlineformulatexmathnotationlatexbetatexmathinlineformulagasub2subosub3subschottkybarrierdiodeonsapphiresubstratewithreverseblockingvoltageof17kv AT jinchengzhang lateralinlineformulatexmathnotationlatexbetatexmathinlineformulagasub2subosub3subschottkybarrierdiodeonsapphiresubstratewithreverseblockingvoltageof17kv AT yuehao lateralinlineformulatexmathnotationlatexbetatexmathinlineformulagasub2subosub3subschottkybarrierdiodeonsapphiresubstratewithreverseblockingvoltageof17kv
_version_	1718420692955824128

Lateral <inline-formula> <tex-math notation="LaTeX">$\beta$ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode on Sapphire Substrate With Reverse Blocking Voltage of 1.7 kV

Ejemplares similares