$Lateral <inline-formula> <tex-math notation="LaTeX">$\beta$ </tex-math></inline-formula>-Ga2O3 Schottky Barrier Diode on Sapphire Substrate With Reverse Blocking Voltage of 1.7 kV$
Código QR

Lateral <inline-formula> <tex-math notation="LaTeX">$\beta$ </tex-math></inline-formula>-Ga2O3 Schottky Barrier Diode on Sapphire Substrate With Reverse Blocking Voltage of 1.7 kV

In this paper, we report on achieving the first high performance lateral <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula>-Ga2O3 Schottky barrier diode (SBD) on sapphire substrate via tran...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	Zhuangzhuang Hu, Hong Zhou, Kui Dang, Yuncong Cai, Zhaoqing Feng, Yangyang Gao, Qian Feng, Jincheng Zhang, Yue Hao
Formato:	article
Lenguaje:	EN
Publicado:	IEEE 2018
Materias:	β-Ga₂O₃ nano-membrane Sapphire substrate lateral Schottky barrier diode breakdown Electrical engineering. Electronics. Nuclear engineering TK1-9971
Acceso en línea:	https://doaj.org/article/c3652f9b187748fcbc13a296267a3305
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

Sea el primero en dejar un comentario!

Lateral <inline-formula> <tex-math notation="LaTeX">$\beta$ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode on Sapphire Substrate With Reverse Blocking Voltage of 1.7 kV

Ejemplares similares