Improved Noise Performance of CMOS Poly Gate Single-Photon Avalanche Diodes

The noise performance of three types of n<sup>&#x002B;</sup>&#x002F;p-well single-photon avalanche diodes (SPADs) fabricated in a standard 180 nm CMOS technology is studied. The SPADs had different poly gate configurations: no poly gate (SPAD_NG), a dummy floating poly gate (SPAD...

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Autores principales: Wei Jiang, Ryan Scott, M. Jamal Deen
Formato: article
Lenguaje:EN
Publicado: IEEE 2022
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Acceso en línea:https://doaj.org/article/c3c0fd1ae8f040ab869719ea2b111f1c
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