Improved Noise Performance of CMOS Poly Gate Single-Photon Avalanche Diodes

The noise performance of three types of n<sup>+</sup>/p-well single-photon avalanche diodes (SPADs) fabricated in a standard 180 nm CMOS technology is studied. The SPADs had different poly gate configurations: no poly gate (SPAD_NG), a dummy floating poly gate (SPAD...

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Autores principales:	Wei Jiang, Ryan Scott, M. Jamal Deen
Formato:	article
Lenguaje:	EN
Publicado:	IEEE 2022
Materias:	Single photon avalanche diode (SPAD) guard ring poly gate dark count rate (DCR) afterpulsing (AP) Applied optics. Photonics TA1501-1820 Optics. Light QC350-467
Acceso en línea:	https://doaj.org/article/c3c0fd1ae8f040ab869719ea2b111f1c
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spelling	oai:doaj.org-article:c3c0fd1ae8f040ab869719ea2b111f1c2021-12-01T00:00:08ZImproved Noise Performance of CMOS Poly Gate Single-Photon Avalanche Diodes1943-065510.1109/JPHOT.2021.3128055https://doaj.org/article/c3c0fd1ae8f040ab869719ea2b111f1c2022-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/9614995/https://doaj.org/toc/1943-0655The noise performance of three types of n<sup>+</sup>/p-well single-photon avalanche diodes (SPADs) fabricated in a standard 180 nm CMOS technology is studied. The SPADs had different poly gate configurations: no poly gate (SPAD_NG), a dummy floating poly gate (SPAD_DG), and a field poly gate connected to the n<sup>+</sup> cathode (SPAD_FG). The measurement results of dark count rate and afterpulsing showed that the SPAD_DG had better noise performance compared to the SPAD_NG. This is because the dummy poly gate pushed the shallow trench isolation away from the active region of the SPAD, thus reducing the dark noise generated from the Si-SiO<sub>2</sub> interface. The measurement results also revealed that the noise performance can be further improved by connecting the poly gate to the n<sup>+</sup> cathode. The voltage on the poly gate in SPAD_FG reduced the electric field in the n-well guard ring (GR) region, thus reducing the carriers from the GR region that can enter the active region of SPADs and initiate dark counts.Wei JiangRyan ScottM. Jamal DeenIEEEarticleSingle photon avalanche diode (SPAD)guard ringpoly gatedark count rate (DCR)afterpulsing (AP)Applied optics. PhotonicsTA1501-1820Optics. LightQC350-467ENIEEE Photonics Journal, Vol 14, Iss 1, Pp 1-8 (2022)
institution	DOAJ
collection	DOAJ
language	EN
topic	Single photon avalanche diode (SPAD) guard ring poly gate dark count rate (DCR) afterpulsing (AP) Applied optics. Photonics TA1501-1820 Optics. Light QC350-467
spellingShingle	Single photon avalanche diode (SPAD) guard ring poly gate dark count rate (DCR) afterpulsing (AP) Applied optics. Photonics TA1501-1820 Optics. Light QC350-467 Wei Jiang Ryan Scott M. Jamal Deen Improved Noise Performance of CMOS Poly Gate Single-Photon Avalanche Diodes
description	The noise performance of three types of n<sup>+</sup>/p-well single-photon avalanche diodes (SPADs) fabricated in a standard 180 nm CMOS technology is studied. The SPADs had different poly gate configurations: no poly gate (SPAD_NG), a dummy floating poly gate (SPAD_DG), and a field poly gate connected to the n<sup>+</sup> cathode (SPAD_FG). The measurement results of dark count rate and afterpulsing showed that the SPAD_DG had better noise performance compared to the SPAD_NG. This is because the dummy poly gate pushed the shallow trench isolation away from the active region of the SPAD, thus reducing the dark noise generated from the Si-SiO<sub>2</sub> interface. The measurement results also revealed that the noise performance can be further improved by connecting the poly gate to the n<sup>+</sup> cathode. The voltage on the poly gate in SPAD_FG reduced the electric field in the n-well guard ring (GR) region, thus reducing the carriers from the GR region that can enter the active region of SPADs and initiate dark counts.
format	article
author	Wei Jiang Ryan Scott M. Jamal Deen
author_facet	Wei Jiang Ryan Scott M. Jamal Deen
author_sort	Wei Jiang
title	Improved Noise Performance of CMOS Poly Gate Single-Photon Avalanche Diodes
title_short	Improved Noise Performance of CMOS Poly Gate Single-Photon Avalanche Diodes
title_full	Improved Noise Performance of CMOS Poly Gate Single-Photon Avalanche Diodes
title_fullStr	Improved Noise Performance of CMOS Poly Gate Single-Photon Avalanche Diodes
title_full_unstemmed	Improved Noise Performance of CMOS Poly Gate Single-Photon Avalanche Diodes
title_sort	improved noise performance of cmos poly gate single-photon avalanche diodes
publisher	IEEE
publishDate	2022
url	https://doaj.org/article/c3c0fd1ae8f040ab869719ea2b111f1c
work_keys_str_mv	AT weijiang improvednoiseperformanceofcmospolygatesinglephotonavalanchediodes AT ryanscott improvednoiseperformanceofcmospolygatesinglephotonavalanchediodes AT mjamaldeen improvednoiseperformanceofcmospolygatesinglephotonavalanchediodes
_version_	1718406226566447104

Improved Noise Performance of CMOS Poly Gate Single-Photon Avalanche Diodes

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