Improved Noise Performance of CMOS Poly Gate Single-Photon Avalanche Diodes
The noise performance of three types of n<sup>+</sup>/p-well single-photon avalanche diodes (SPADs) fabricated in a standard 180 nm CMOS technology is studied. The SPADs had different poly gate configurations: no poly gate (SPAD_NG), a dummy floating poly gate (SPAD...
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| Autores principales: | , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
IEEE
2022
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/c3c0fd1ae8f040ab869719ea2b111f1c |
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