Improved Noise Performance of CMOS Poly Gate Single-Photon Avalanche Diodes
The noise performance of three types of n<sup>+</sup>/p-well single-photon avalanche diodes (SPADs) fabricated in a standard 180 nm CMOS technology is studied. The SPADs had different poly gate configurations: no poly gate (SPAD_NG), a dummy floating poly gate (SPAD...
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| Auteurs principaux: | , , |
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| Format: | article |
| Langue: | EN |
| Publié: |
IEEE
2022
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| Sujets: | |
| Accès en ligne: | https://doaj.org/article/c3c0fd1ae8f040ab869719ea2b111f1c |
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