Fabrication of 150‐nm AlGaN/GaN field‐plated High Electron Mobility Transistors using i‐line stepper

Abstract This article reports a high throughput 150‐nm‐gate AlGaN/GaN high electron mobility transistor (HEMT) process using i‐line stepper lithography and a thermal reflow technique. Optimizing thermal reflow conditions, fabrication of a 150‐nm gate structure was successfully realized with the init...

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Autores principales:	Yuji Ando, Ryutaro Makisako, Hidemasa Takahashi, Akio Wakejima, Jun Suda
Formato:	article
Lenguaje:	EN
Publicado:	Wiley 2021
Materias:	Electrical engineering. Electronics. Nuclear engineering TK1-9971
Acceso en línea:	https://doaj.org/article/c4089ebe3da344e09f0a4a653c6cd516
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spelling	oai:doaj.org-article:c4089ebe3da344e09f0a4a653c6cd5162021-11-19T05:42:54ZFabrication of 150‐nm AlGaN/GaN field‐plated High Electron Mobility Transistors using i‐line stepper1350-911X0013-519410.1049/ell2.12303https://doaj.org/article/c4089ebe3da344e09f0a4a653c6cd5162021-11-01T00:00:00Zhttps://doi.org/10.1049/ell2.12303https://doaj.org/toc/0013-5194https://doaj.org/toc/1350-911XAbstract This article reports a high throughput 150‐nm‐gate AlGaN/GaN high electron mobility transistor (HEMT) process using i‐line stepper lithography and a thermal reflow technique. Optimizing thermal reflow conditions, fabrication of a 150‐nm gate structure was successfully realized with the initial resist opening of 0.7 μm. AlGaN/GaN field‐plated HEMTs were fabricated on a semi‐insulating SiC substrate by using this process. In spite of unoptimized structures, fabricated 150‐nm gate devices exhibited the maximum drain current of 0.65 A/mm and the gate‐drain breakdown voltage exceeding 200 V. Based on cold HEMT extraction measurements, the average gate length of 187 nm and the standard deviation of 30 nm were obtained on a quarter 4‐in. wafer.Yuji AndoRyutaro MakisakoHidemasa TakahashiAkio WakejimaJun SudaWileyarticleElectrical engineering. Electronics. Nuclear engineeringTK1-9971ENElectronics Letters, Vol 57, Iss 24, Pp 948-949 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Electrical engineering. Electronics. Nuclear engineering TK1-9971
spellingShingle	Electrical engineering. Electronics. Nuclear engineering TK1-9971 Yuji Ando Ryutaro Makisako Hidemasa Takahashi Akio Wakejima Jun Suda Fabrication of 150‐nm AlGaN/GaN field‐plated High Electron Mobility Transistors using i‐line stepper
description	Abstract This article reports a high throughput 150‐nm‐gate AlGaN/GaN high electron mobility transistor (HEMT) process using i‐line stepper lithography and a thermal reflow technique. Optimizing thermal reflow conditions, fabrication of a 150‐nm gate structure was successfully realized with the initial resist opening of 0.7 μm. AlGaN/GaN field‐plated HEMTs were fabricated on a semi‐insulating SiC substrate by using this process. In spite of unoptimized structures, fabricated 150‐nm gate devices exhibited the maximum drain current of 0.65 A/mm and the gate‐drain breakdown voltage exceeding 200 V. Based on cold HEMT extraction measurements, the average gate length of 187 nm and the standard deviation of 30 nm were obtained on a quarter 4‐in. wafer.
format	article
author	Yuji Ando Ryutaro Makisako Hidemasa Takahashi Akio Wakejima Jun Suda
author_facet	Yuji Ando Ryutaro Makisako Hidemasa Takahashi Akio Wakejima Jun Suda
author_sort	Yuji Ando
title	Fabrication of 150‐nm AlGaN/GaN field‐plated High Electron Mobility Transistors using i‐line stepper
title_short	Fabrication of 150‐nm AlGaN/GaN field‐plated High Electron Mobility Transistors using i‐line stepper
title_full	Fabrication of 150‐nm AlGaN/GaN field‐plated High Electron Mobility Transistors using i‐line stepper
title_fullStr	Fabrication of 150‐nm AlGaN/GaN field‐plated High Electron Mobility Transistors using i‐line stepper
title_full_unstemmed	Fabrication of 150‐nm AlGaN/GaN field‐plated High Electron Mobility Transistors using i‐line stepper
title_sort	fabrication of 150‐nm algan/gan field‐plated high electron mobility transistors using i‐line stepper
publisher	Wiley
publishDate	2021
url	https://doaj.org/article/c4089ebe3da344e09f0a4a653c6cd516
work_keys_str_mv	AT yujiando fabricationof150nmalganganfieldplatedhighelectronmobilitytransistorsusingilinestepper AT ryutaromakisako fabricationof150nmalganganfieldplatedhighelectronmobilitytransistorsusingilinestepper AT hidemasatakahashi fabricationof150nmalganganfieldplatedhighelectronmobilitytransistorsusingilinestepper AT akiowakejima fabricationof150nmalganganfieldplatedhighelectronmobilitytransistorsusingilinestepper AT junsuda fabricationof150nmalganganfieldplatedhighelectronmobilitytransistorsusingilinestepper
_version_	1718420400709304320

Fabrication of 150‐nm AlGaN/GaN field‐plated High Electron Mobility Transistors using i‐line stepper

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