Fabrication of 150‐nm AlGaN/GaN field‐plated High Electron Mobility Transistors using i‐line stepper
Abstract This article reports a high throughput 150‐nm‐gate AlGaN/GaN high electron mobility transistor (HEMT) process using i‐line stepper lithography and a thermal reflow technique. Optimizing thermal reflow conditions, fabrication of a 150‐nm gate structure was successfully realized with the init...
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| Auteurs principaux: | , , , , |
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| Format: | article |
| Langue: | EN |
| Publié: |
Wiley
2021
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| Sujets: | |
| Accès en ligne: | https://doaj.org/article/c4089ebe3da344e09f0a4a653c6cd516 |
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