Superior polarization retention through engineered domain wall pinning

The use of ferroelectric materials in memory device applications is held back by low retention times. Here, the authors demonstrate that by intentionally introducing defective nanoregions which increase the activation field for domain wall motion, retention times larger than a year can be achieved.

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Autores principales: Dawei Zhang, Daniel Sando, Pankaj Sharma, Xuan Cheng, Fan Ji, Vivasha Govinden, Matthew Weyland, Valanoor Nagarajan, Jan Seidel
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2020
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Acceso en línea:https://doaj.org/article/c454118ffae940319a936f737a14e393
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