Superior polarization retention through engineered domain wall pinning

The use of ferroelectric materials in memory device applications is held back by low retention times. Here, the authors demonstrate that by intentionally introducing defective nanoregions which increase the activation field for domain wall motion, retention times larger than a year can be achieved.

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Autores principales:	Dawei Zhang, Daniel Sando, Pankaj Sharma, Xuan Cheng, Fan Ji, Vivasha Govinden, Matthew Weyland, Valanoor Nagarajan, Jan Seidel
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2020
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/c454118ffae940319a936f737a14e393
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id	oai:doaj.org-article:c454118ffae940319a936f737a14e393
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spelling	oai:doaj.org-article:c454118ffae940319a936f737a14e3932021-12-02T15:39:13ZSuperior polarization retention through engineered domain wall pinning10.1038/s41467-019-14250-72041-1723https://doaj.org/article/c454118ffae940319a936f737a14e3932020-01-01T00:00:00Zhttps://doi.org/10.1038/s41467-019-14250-7https://doaj.org/toc/2041-1723The use of ferroelectric materials in memory device applications is held back by low retention times. Here, the authors demonstrate that by intentionally introducing defective nanoregions which increase the activation field for domain wall motion, retention times larger than a year can be achieved.Dawei ZhangDaniel SandoPankaj SharmaXuan ChengFan JiVivasha GovindenMatthew WeylandValanoor NagarajanJan SeidelNature PortfolioarticleScienceQENNature Communications, Vol 11, Iss 1, Pp 1-8 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Dawei Zhang Daniel Sando Pankaj Sharma Xuan Cheng Fan Ji Vivasha Govinden Matthew Weyland Valanoor Nagarajan Jan Seidel Superior polarization retention through engineered domain wall pinning
description	The use of ferroelectric materials in memory device applications is held back by low retention times. Here, the authors demonstrate that by intentionally introducing defective nanoregions which increase the activation field for domain wall motion, retention times larger than a year can be achieved.
format	article
author	Dawei Zhang Daniel Sando Pankaj Sharma Xuan Cheng Fan Ji Vivasha Govinden Matthew Weyland Valanoor Nagarajan Jan Seidel
author_facet	Dawei Zhang Daniel Sando Pankaj Sharma Xuan Cheng Fan Ji Vivasha Govinden Matthew Weyland Valanoor Nagarajan Jan Seidel
author_sort	Dawei Zhang
title	Superior polarization retention through engineered domain wall pinning
title_short	Superior polarization retention through engineered domain wall pinning
title_full	Superior polarization retention through engineered domain wall pinning
title_fullStr	Superior polarization retention through engineered domain wall pinning
title_full_unstemmed	Superior polarization retention through engineered domain wall pinning
title_sort	superior polarization retention through engineered domain wall pinning
publisher	Nature Portfolio
publishDate	2020
url	https://doaj.org/article/c454118ffae940319a936f737a14e393
work_keys_str_mv	AT daweizhang superiorpolarizationretentionthroughengineereddomainwallpinning AT danielsando superiorpolarizationretentionthroughengineereddomainwallpinning AT pankajsharma superiorpolarizationretentionthroughengineereddomainwallpinning AT xuancheng superiorpolarizationretentionthroughengineereddomainwallpinning AT fanji superiorpolarizationretentionthroughengineereddomainwallpinning AT vivashagovinden superiorpolarizationretentionthroughengineereddomainwallpinning AT matthewweyland superiorpolarizationretentionthroughengineereddomainwallpinning AT valanoornagarajan superiorpolarizationretentionthroughengineereddomainwallpinning AT janseidel superiorpolarizationretentionthroughengineereddomainwallpinning
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Superior polarization retention through engineered domain wall pinning

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