Thermal neutron transmutation doping of GaN semiconductors
Abstract High quality Ge doping of GaN is demonstrated using primarily thermal neutrons for the first time. In this study, GaN was doped with Ge to concentrations from 1016 Ge atoms/cm3 to 1018 Ge atoms/cm3. The doping concentrations were measured using gamma-ray spectroscopy and confirmed using SIM...
Enregistré dans:
| Auteurs principaux: | , , , , |
|---|---|
| Format: | article |
| Langue: | EN |
| Publié: |
Nature Portfolio
2020
|
| Sujets: | |
| Accès en ligne: | https://doaj.org/article/c4721638264a410ebda9ae01d8d216a9 |
| Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|