Mechanism of carrier controllability with metal capping layer on amorphous oxide SiZnSnO semiconductor

Abstract The change of electrical performance of amorphous SiZnSnO thin film transistors (a-SZTO TFTs) has been investigated depending on various metal capping layers on the channel layer by causing different contact property. It was confirmed that the change of electrical characteristics was sensit...

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Autores principales:	Byeong Hyeon Lee, Ahrum Sohn, Sangsig Kim, Sang Yeol Lee
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2019
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/c56da8c0b642482ebdd3bba047011670
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spelling	oai:doaj.org-article:c56da8c0b642482ebdd3bba0470116702021-12-02T15:08:45ZMechanism of carrier controllability with metal capping layer on amorphous oxide SiZnSnO semiconductor10.1038/s41598-018-37530-62045-2322https://doaj.org/article/c56da8c0b642482ebdd3bba0470116702019-01-01T00:00:00Zhttps://doi.org/10.1038/s41598-018-37530-6https://doaj.org/toc/2045-2322Abstract The change of electrical performance of amorphous SiZnSnO thin film transistors (a-SZTO TFTs) has been investigated depending on various metal capping layers on the channel layer by causing different contact property. It was confirmed that the change of electrical characteristics was sensitively dependent on the change of the capping layer materials on the same channel layer between the source/drain electrodes. This sensitive change in the electrical characteristics is mainly due to different work function of metal capping layer on the channel layer. The work function of each capping layer material has been analyzed and derived by using Kelvin probe force microscopy and compared with the energy bandgap of the SZTO layer. When the work function of the capping layer is larger than that of the channel layer, electrons are depleted from the channel layer to the capping layer. On the contrary, in the case of using a material having a work function smaller than that of the channel layer, the electrical characteristics were improved because electrons were injected into the channel layer. Based on depletion and injection mechanism caused by different contact barrier between metal capping layer and channel layer, NOT, NAND, and NOR logic circuits have been implemented simply by changing metal capping layer on the channel layer.Byeong Hyeon LeeAhrum SohnSangsig KimSang Yeol LeeNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 9, Iss 1, Pp 1-7 (2019)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Byeong Hyeon Lee Ahrum Sohn Sangsig Kim Sang Yeol Lee Mechanism of carrier controllability with metal capping layer on amorphous oxide SiZnSnO semiconductor
description	Abstract The change of electrical performance of amorphous SiZnSnO thin film transistors (a-SZTO TFTs) has been investigated depending on various metal capping layers on the channel layer by causing different contact property. It was confirmed that the change of electrical characteristics was sensitively dependent on the change of the capping layer materials on the same channel layer between the source/drain electrodes. This sensitive change in the electrical characteristics is mainly due to different work function of metal capping layer on the channel layer. The work function of each capping layer material has been analyzed and derived by using Kelvin probe force microscopy and compared with the energy bandgap of the SZTO layer. When the work function of the capping layer is larger than that of the channel layer, electrons are depleted from the channel layer to the capping layer. On the contrary, in the case of using a material having a work function smaller than that of the channel layer, the electrical characteristics were improved because electrons were injected into the channel layer. Based on depletion and injection mechanism caused by different contact barrier between metal capping layer and channel layer, NOT, NAND, and NOR logic circuits have been implemented simply by changing metal capping layer on the channel layer.
format	article
author	Byeong Hyeon Lee Ahrum Sohn Sangsig Kim Sang Yeol Lee
author_facet	Byeong Hyeon Lee Ahrum Sohn Sangsig Kim Sang Yeol Lee
author_sort	Byeong Hyeon Lee
title	Mechanism of carrier controllability with metal capping layer on amorphous oxide SiZnSnO semiconductor
title_short	Mechanism of carrier controllability with metal capping layer on amorphous oxide SiZnSnO semiconductor
title_full	Mechanism of carrier controllability with metal capping layer on amorphous oxide SiZnSnO semiconductor
title_fullStr	Mechanism of carrier controllability with metal capping layer on amorphous oxide SiZnSnO semiconductor
title_full_unstemmed	Mechanism of carrier controllability with metal capping layer on amorphous oxide SiZnSnO semiconductor
title_sort	mechanism of carrier controllability with metal capping layer on amorphous oxide siznsno semiconductor
publisher	Nature Portfolio
publishDate	2019
url	https://doaj.org/article/c56da8c0b642482ebdd3bba047011670
work_keys_str_mv	AT byeonghyeonlee mechanismofcarriercontrollabilitywithmetalcappinglayeronamorphousoxidesiznsnosemiconductor AT ahrumsohn mechanismofcarriercontrollabilitywithmetalcappinglayeronamorphousoxidesiznsnosemiconductor AT sangsigkim mechanismofcarriercontrollabilitywithmetalcappinglayeronamorphousoxidesiznsnosemiconductor AT sangyeollee mechanismofcarriercontrollabilitywithmetalcappinglayeronamorphousoxidesiznsnosemiconductor
_version_	1718388025945227264

Mechanism of carrier controllability with metal capping layer on amorphous oxide SiZnSnO semiconductor

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