Alleviation of Negative-Bias Temperature Instability in Si p-FinFETs With ALD W Gate-Filling Metal by Annealing Process Optimization
In this article, we present an experimental study on the impact of post-metallization annealing conditions on the negative-bias temperature instability (NBTI) of Si p-channel fin field-effect transistors (p-FinFETs) with atomic layer deposition tungsten (ALD W) as the gate-filling metal. The effects...
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| Main Authors: | , , , , , , , , , , , , , , |
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| Format: | article |
| Language: | EN |
| Published: |
IEEE
2021
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| Subjects: | |
| Online Access: | https://doaj.org/article/c5b752e8b8c341c8ae304cdcd783f0ac |
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