Localized electronic vacancy level and its effect on the properties of doped manganites

Abstract Oxygen vacancies are common to most metal oxides and usually play a crucial role in determining the properties of the host material. In this work, we perform ab initio calculations to study the influence of vacancies in doped manganites $$\text {La}_{(1-\text {x})} \text {Sr}_{\text {x}} \t...

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Autores principales: Dilson Juan, Miguel Pruneda, Valeria Ferrari
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
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Acceso en línea:https://doaj.org/article/c5de169bb1db4b8f9f78035de3618ce3
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