Localized electronic vacancy level and its effect on the properties of doped manganites
Abstract Oxygen vacancies are common to most metal oxides and usually play a crucial role in determining the properties of the host material. In this work, we perform ab initio calculations to study the influence of vacancies in doped manganites $$\text {La}_{(1-\text {x})} \text {Sr}_{\text {x}} \t...
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| Auteurs principaux: | , , |
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| Format: | article |
| Langue: | EN |
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Nature Portfolio
2021
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| Accès en ligne: | https://doaj.org/article/c5de169bb1db4b8f9f78035de3618ce3 |
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