Nanocrystallized Ge-Rich SiGe-HfO<sub>2</sub> Highly Photosensitive in Short-Wave Infrared

Group IV nanocrystals (NCs), in particular from the Si–Ge system, are of high interest for Si photonics applications. Ge-rich SiGe NCs embedded in nanocrystallized HfO<sub>2</sub> were obtained by magnetron sputtering deposition followed by rapid thermal annealing at 600 °C for nanostruc...

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Autores principales:	Catalin Palade, Ana-Maria Lepadatu, Adrian Slav, Valentin Serban Teodorescu, Toma Stoica, Magdalena Lidia Ciurea, Doru Ursutiu, Cornel Samoila
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	group IV nanocrystals HfO<sub>2</sub> magnetron sputtering rapid thermal annealing SWIR spectral photocurrent Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85
Acceso en línea:	https://doaj.org/article/c6011a9370384f2894af748a47ad2511
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spelling	oai:doaj.org-article:c6011a9370384f2894af748a47ad25112021-11-25T18:15:53ZNanocrystallized Ge-Rich SiGe-HfO<sub>2</sub> Highly Photosensitive in Short-Wave Infrared10.3390/ma142270401996-1944https://doaj.org/article/c6011a9370384f2894af748a47ad25112021-11-01T00:00:00Zhttps://www.mdpi.com/1996-1944/14/22/7040https://doaj.org/toc/1996-1944Group IV nanocrystals (NCs), in particular from the Si–Ge system, are of high interest for Si photonics applications. Ge-rich SiGe NCs embedded in nanocrystallized HfO<sub>2</sub> were obtained by magnetron sputtering deposition followed by rapid thermal annealing at 600 °C for nanostructuring. The complex characterization of morphology and crystalline structure by X-ray diffraction, μ-Raman spectroscopy, and cross-section transmission electron microscopy evidenced the formation of Ge-rich SiGe NCs (3–7 nm diameter) in a matrix of nanocrystallized HfO<sub>2</sub>. For avoiding the fast diffusion of Ge, the layer containing SiGe NCs was cladded by very thin top and bottom pure HfO<sub>2</sub> layers. Nanocrystallized HfO<sub>2</sub> with tetragonal/orthorhombic structure was revealed beside the monoclinic phase in both buffer HfO<sub>2</sub> and SiGe NCs–HfO<sub>2</sub> layers. In the top part, the film is mainly crystallized in the monoclinic phase. High efficiency of the photocurrent was obtained in a broad spectral range of curves of 600–2000 nm at low temperatures. The high-quality SiGe NC/HfO<sub>2</sub> matrix interface together with the strain induced in SiGe NCs by nanocrystallization of both HfO<sub>2</sub> matrix and SiGe nanoparticles explain the unexpectedly extended photoelectric sensitivity in short-wave infrared up to about 2000 nm that is more than the sensitivity limit for Ge, in spite of the increase of bandgap by well-known quantum confinement effect in SiGe NCs.Catalin PaladeAna-Maria LepadatuAdrian SlavValentin Serban TeodorescuToma StoicaMagdalena Lidia CiureaDoru UrsutiuCornel SamoilaMDPI AGarticlegroup IV nanocrystalsHfO<sub>2</sub>magnetron sputteringrapid thermal annealingSWIRspectral photocurrentTechnologyTElectrical engineering. Electronics. Nuclear engineeringTK1-9971Engineering (General). Civil engineering (General)TA1-2040MicroscopyQH201-278.5Descriptive and experimental mechanicsQC120-168.85ENMaterials, Vol 14, Iss 7040, p 7040 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	group IV nanocrystals HfO<sub>2</sub> magnetron sputtering rapid thermal annealing SWIR spectral photocurrent Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85
spellingShingle	group IV nanocrystals HfO<sub>2</sub> magnetron sputtering rapid thermal annealing SWIR spectral photocurrent Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85 Catalin Palade Ana-Maria Lepadatu Adrian Slav Valentin Serban Teodorescu Toma Stoica Magdalena Lidia Ciurea Doru Ursutiu Cornel Samoila Nanocrystallized Ge-Rich SiGe-HfO<sub>2</sub> Highly Photosensitive in Short-Wave Infrared
description	Group IV nanocrystals (NCs), in particular from the Si–Ge system, are of high interest for Si photonics applications. Ge-rich SiGe NCs embedded in nanocrystallized HfO<sub>2</sub> were obtained by magnetron sputtering deposition followed by rapid thermal annealing at 600 °C for nanostructuring. The complex characterization of morphology and crystalline structure by X-ray diffraction, μ-Raman spectroscopy, and cross-section transmission electron microscopy evidenced the formation of Ge-rich SiGe NCs (3–7 nm diameter) in a matrix of nanocrystallized HfO<sub>2</sub>. For avoiding the fast diffusion of Ge, the layer containing SiGe NCs was cladded by very thin top and bottom pure HfO<sub>2</sub> layers. Nanocrystallized HfO<sub>2</sub> with tetragonal/orthorhombic structure was revealed beside the monoclinic phase in both buffer HfO<sub>2</sub> and SiGe NCs–HfO<sub>2</sub> layers. In the top part, the film is mainly crystallized in the monoclinic phase. High efficiency of the photocurrent was obtained in a broad spectral range of curves of 600–2000 nm at low temperatures. The high-quality SiGe NC/HfO<sub>2</sub> matrix interface together with the strain induced in SiGe NCs by nanocrystallization of both HfO<sub>2</sub> matrix and SiGe nanoparticles explain the unexpectedly extended photoelectric sensitivity in short-wave infrared up to about 2000 nm that is more than the sensitivity limit for Ge, in spite of the increase of bandgap by well-known quantum confinement effect in SiGe NCs.
format	article
author	Catalin Palade Ana-Maria Lepadatu Adrian Slav Valentin Serban Teodorescu Toma Stoica Magdalena Lidia Ciurea Doru Ursutiu Cornel Samoila
author_facet	Catalin Palade Ana-Maria Lepadatu Adrian Slav Valentin Serban Teodorescu Toma Stoica Magdalena Lidia Ciurea Doru Ursutiu Cornel Samoila
author_sort	Catalin Palade
title	Nanocrystallized Ge-Rich SiGe-HfO<sub>2</sub> Highly Photosensitive in Short-Wave Infrared
title_short	Nanocrystallized Ge-Rich SiGe-HfO<sub>2</sub> Highly Photosensitive in Short-Wave Infrared
title_full	Nanocrystallized Ge-Rich SiGe-HfO<sub>2</sub> Highly Photosensitive in Short-Wave Infrared
title_fullStr	Nanocrystallized Ge-Rich SiGe-HfO<sub>2</sub> Highly Photosensitive in Short-Wave Infrared
title_full_unstemmed	Nanocrystallized Ge-Rich SiGe-HfO<sub>2</sub> Highly Photosensitive in Short-Wave Infrared
title_sort	nanocrystallized ge-rich sige-hfo<sub>2</sub> highly photosensitive in short-wave infrared
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/c6011a9370384f2894af748a47ad2511
work_keys_str_mv	AT catalinpalade nanocrystallizedgerichsigehfosub2subhighlyphotosensitiveinshortwaveinfrared AT anamarialepadatu nanocrystallizedgerichsigehfosub2subhighlyphotosensitiveinshortwaveinfrared AT adrianslav nanocrystallizedgerichsigehfosub2subhighlyphotosensitiveinshortwaveinfrared AT valentinserbanteodorescu nanocrystallizedgerichsigehfosub2subhighlyphotosensitiveinshortwaveinfrared AT tomastoica nanocrystallizedgerichsigehfosub2subhighlyphotosensitiveinshortwaveinfrared AT magdalenalidiaciurea nanocrystallizedgerichsigehfosub2subhighlyphotosensitiveinshortwaveinfrared AT doruursutiu nanocrystallizedgerichsigehfosub2subhighlyphotosensitiveinshortwaveinfrared AT cornelsamoila nanocrystallizedgerichsigehfosub2subhighlyphotosensitiveinshortwaveinfrared
_version_	1718411404713656320

Nanocrystallized Ge-Rich SiGe-HfO<sub>2</sub> Highly Photosensitive in Short-Wave Infrared

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